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Probing the Optical Properties of MoS2 on SiO2/Si and Sapphire Substrates
Open AccessArticle

Pinch-Off Formation in Monolayer and Multilayers MoS2 Field-Effect Transistors

School of Electrical Engineering, Tel-Aviv University, Tel-Aviv 69978, Israel
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Nanomaterials 2019, 9(6), 882; https://doi.org/10.3390/nano9060882
Received: 7 May 2019 / Revised: 30 May 2019 / Accepted: 10 June 2019 / Published: 14 June 2019
The discovery of layered materials, including transition metal dichalcogenides (TMD), gives rise to a variety of novel nanoelectronic devices, including fast switching field-effect transistors (FET), assembled heterostructures, flexible electronics, etc. Molybdenum disulfide (MoS2), a transition metal dichalcogenides semiconductor, is considered an auspicious candidate for the post-silicon era due to its outstanding chemical and thermal stability. We present a Kelvin probe force microscopy (KPFM) study of a MoS2 FET device, showing direct evidence for pinch-off formation in the channel by in situ monitoring of the electrostatic potential distribution along the conducting channel of the transistor. In addition, we present a systematic comparison between a monolayer MoS2 FET and a few-layer MoS2 FET regarding gating effects, electric field distribution, depletion region, and pinch-off formation in such devices. View Full-Text
Keywords: 2D materials; KPFM; MoS2; pinch-off 2D materials; KPFM; MoS2; pinch-off
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MDPI and ACS Style

Vaknin, Y.; Dagan, R.; Rosenwaks, Y. Pinch-Off Formation in Monolayer and Multilayers MoS2 Field-Effect Transistors. Nanomaterials 2019, 9, 882.

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