Raman Study of Strain Relaxation from Grain Boundaries in Epitaxial Graphene Grown by Chemical Vapor Deposition on SiC
Abstract
:1. Introduction
2. Materials and Methods
3. Results and Discussion
- (1)
- lattice diffusion directly into the grains and
- (2)
- much faster diffusion along the grain boundary.
4. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
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Chong, L.; Guo, H.; Zhang, Y.; Hu, Y.; Zhang, Y. Raman Study of Strain Relaxation from Grain Boundaries in Epitaxial Graphene Grown by Chemical Vapor Deposition on SiC. Nanomaterials 2019, 9, 372. https://doi.org/10.3390/nano9030372
Chong L, Guo H, Zhang Y, Hu Y, Zhang Y. Raman Study of Strain Relaxation from Grain Boundaries in Epitaxial Graphene Grown by Chemical Vapor Deposition on SiC. Nanomaterials. 2019; 9(3):372. https://doi.org/10.3390/nano9030372
Chicago/Turabian StyleChong, Laiyuan, Hui Guo, Yuming Zhang, Yanfei Hu, and Yimen Zhang. 2019. "Raman Study of Strain Relaxation from Grain Boundaries in Epitaxial Graphene Grown by Chemical Vapor Deposition on SiC" Nanomaterials 9, no. 3: 372. https://doi.org/10.3390/nano9030372