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Nanomaterials 2019, 9(2), 311; https://doi.org/10.3390/nano9020311

The Electronic and Magnetic Properties of Multi-Atom Doped Black Phosphorene

Xidian University, No. 2, Taibai South Road, Xi’an 710071, China
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Received: 27 January 2019 / Revised: 19 February 2019 / Accepted: 19 February 2019 / Published: 25 February 2019
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Abstract

Recently, substitutional doping is proved to be an effective route to induce magnetism to black phosphorene for its application in spintronics. Herein, we investigate the thermodynamic stability, electronic and magnetic properties of doped black phosphorene with multi Al or Cl atoms using first-principles calculations. We find these doped phosphorenes are thermodynamically stable at 0 K and the stability first improves and then deteriorates with the number of dopant atom increasing. Corresponding to the variety of stability, the amount of electrons transferred between impurity and neighboring phosphorus atoms also first increase and then reduce. However, the band gap of Al-doped phosphorene reduces monotonically from 0.44 eV to 0.13 eV while that of Cl-doped phosphorene first decreases from 0.10 eV to 0 and then becomes flat, which is a result of the impurity levels emerging and splitting. Besides, in doped phosphorenes with an even number of impurity atoms, the antiferromagnetic order is favored by energy. Through computing the magnetic moment and spin distribution, we further confirm the antiferromagnetic order existing only in the doped phosphorenes with two and four Cl atoms. These results may provide some help for future applications of black phosphorene in spintronics. View Full-Text
Keywords: monolayer black phosphorene; first-principles calculations; electronic properties; magnetism; multi-atom doping; band gap monolayer black phosphorene; first-principles calculations; electronic properties; magnetism; multi-atom doping; band gap
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Wang, K.; Wang, H.; Zhang, M.; Zhao, W.; Liu, Y.; Qin, H. The Electronic and Magnetic Properties of Multi-Atom Doped Black Phosphorene. Nanomaterials 2019, 9, 311.

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