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Nanomaterials 2019, 9(2), 240; https://doi.org/10.3390/nano9020240

Preparation of Tin Oxide Quantum Dots in Aqueous Solution and Applications in Semiconductor Gas Sensors

1
College of Information Science and Technology, Dalian Maritime University, Dalian 116026, China
2
Department of Material Science and Engineering, Dalian Maritime University, Dalian 116026, China
*
Author to whom correspondence should be addressed.
Received: 20 January 2019 / Revised: 1 February 2019 / Accepted: 7 February 2019 / Published: 11 February 2019
(This article belongs to the Special Issue Preparation, Characterization and Utility of Quantum Dots)
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Abstract

Tin oxide quantum dots (QDs) were prepared in aqueous solution from the precursor of tin dichloride via a simple process of hydrolysis and oxidation. The average grain size of QDs was 1.9 nm. The hydrothermal treatment was used to control the average grain size, which increased to 2.7 and 4.0 nm when the operating temperatures of 125 and 225 °C were employed, respectively. The X-ray photoelectron spectroscopy (XPS) spectrum and X-ray diffraction analysis (XRD) pattern confirmed a rutile SnO2 system for the QDs. A band gap of 3.66 eV was evaluated from the UV-VIS absorption spectrum. A fluorescence emission peak was observed at a wavelength of 300 nm, and the response was quenched by the high concentration of QDs in the aqueous solution. The current-voltage (I-V) correlation inferred that grain boundaries had the electrical characteristics of the Schottky barrier. The response of the QD thin film to H2 gas revealed its potential application in semiconductor gas sensors. View Full-Text
Keywords: tin oxide; quantum dot; aqueous solution; semiconductor; gas sensor tin oxide; quantum dot; aqueous solution; semiconductor; gas sensor
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Liu, J.; Xue, W.; Jin, G.; Zhai, Z.; Lv, J.; Hong, W.; Chen, Y. Preparation of Tin Oxide Quantum Dots in Aqueous Solution and Applications in Semiconductor Gas Sensors. Nanomaterials 2019, 9, 240.

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