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Nanomaterials 2019, 9(2), 228; https://doi.org/10.3390/nano9020228

Origin of Room-Temperature Ferromagnetism in Hydrogenated Epitaxial Graphene on Silicon Carbide

Molecular Materials and Nanosystems, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
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Received: 4 January 2019 / Revised: 29 January 2019 / Accepted: 30 January 2019 / Published: 8 February 2019
(This article belongs to the Special Issue Electronic and Thermal Properties of Graphene)
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Abstract

The discovery of room-temperature ferromagnetism of hydrogenated epitaxial graphene on silicon carbide challenges for a fundamental understanding of this long-range phenomenon. Carbon allotropes with their dispersive electron states at the Fermi level and a small spin-orbit coupling are not an obvious candidate for ferromagnetism. Here we show that the origin of ferromagnetism in hydrogenated epitaxial graphene with a relatively high Curie temperature (>300 K) lies in the formation of curved specific carbon site regions in the graphene layer, induced by the underlying Si-dangling bonds and by the hydrogen bonding. Hydrogen adsorption is therefore more favourable at only one sublattice site, resulting in a localized state at the Fermi energy that can be attributed to a pseudo-Landau level splitting. This n = 0 level forms a spin-polarized narrow band at the Fermi energy leading to a high Curie temperature and larger magnetic moment can be achieved due to the presence of Si dangling bonds underneath the hydrogenated graphene layer. View Full-Text
Keywords: hydrogenated epitaxial graphene; electronic structure; ferromagnetism hydrogenated epitaxial graphene; electronic structure; ferromagnetism
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Ridene, M.; Najafi, A.; Flipse, K. Origin of Room-Temperature Ferromagnetism in Hydrogenated Epitaxial Graphene on Silicon Carbide. Nanomaterials 2019, 9, 228.

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