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Open AccessArticle

Origin of Room-Temperature Ferromagnetism in Hydrogenated Epitaxial Graphene on Silicon Carbide

Molecular Materials and Nanosystems, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
Author to whom correspondence should be addressed.
Nanomaterials 2019, 9(2), 228;
Received: 4 January 2019 / Revised: 29 January 2019 / Accepted: 30 January 2019 / Published: 8 February 2019
(This article belongs to the Special Issue Electronic and Thermal Properties of Graphene)
The discovery of room-temperature ferromagnetism of hydrogenated epitaxial graphene on silicon carbide challenges for a fundamental understanding of this long-range phenomenon. Carbon allotropes with their dispersive electron states at the Fermi level and a small spin-orbit coupling are not an obvious candidate for ferromagnetism. Here we show that the origin of ferromagnetism in hydrogenated epitaxial graphene with a relatively high Curie temperature (>300 K) lies in the formation of curved specific carbon site regions in the graphene layer, induced by the underlying Si-dangling bonds and by the hydrogen bonding. Hydrogen adsorption is therefore more favourable at only one sublattice site, resulting in a localized state at the Fermi energy that can be attributed to a pseudo-Landau level splitting. This n = 0 level forms a spin-polarized narrow band at the Fermi energy leading to a high Curie temperature and larger magnetic moment can be achieved due to the presence of Si dangling bonds underneath the hydrogenated graphene layer. View Full-Text
Keywords: hydrogenated epitaxial graphene; electronic structure; ferromagnetism hydrogenated epitaxial graphene; electronic structure; ferromagnetism
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Ridene, M.; Najafi, A.; Flipse, K. Origin of Room-Temperature Ferromagnetism in Hydrogenated Epitaxial Graphene on Silicon Carbide. Nanomaterials 2019, 9, 228.

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