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Open AccessArticle

Arrayed CdTeMicrodots and Their Enhanced Photodetectivity via Piezo-Phototronic Effect

Quantum-Functional Semiconductor Research Center, Dongguk University-Seoul, Seoul 04623, Korea
Nano-Information Technology Academy (NITA), Dongguk University-Seoul, Seoul 04623, Korea
Department of Mechanical and Automotive Engineering, Woosuk University, Chonbuk 55338, Korea
Author to whom correspondence should be addressed.
Nanomaterials 2019, 9(2), 178;
Received: 27 November 2018 / Revised: 21 January 2019 / Accepted: 23 January 2019 / Published: 1 February 2019
(This article belongs to the Special Issue Optoelectronic Nanodevices)
In this paper, a photodetector based on arrayed CdTe microdots was fabricated on Bi coated transparent conducting indium tin oxide (ITO)/glass substrates. Current-voltage characteristics of these photodetectors revealed an ultrahigh sensitivity under stress (in the form of force through press) while compared to normal condition. The devices exhibited excellent photosensing properties with photoinduced current increasing from 20 to 76 μA cm−2 under stress. Furthermore, the photoresponsivity of the devices also increased under stress from 3.2 × 10−4 A/W to 5.5 × 10−3 A/W at a bias of 5 V. The observed characteristics are attributed to the piezopotential induced change in Schottky barrier height, which actually results from the piezo-phototronic effect. The obtained results also demonstrate the feasibility in realization of a facile and promising CdTe microdots-based photodetector via piezo-phototronic effect. View Full-Text
Keywords: CdTe microdots; Schottky barrier; photodetector; piezo-phototronic effect CdTe microdots; Schottky barrier; photodetector; piezo-phototronic effect
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MDPI and ACS Style

Lee, D.J.; Mohan Kumar, G.; Ilanchezhiyan, P.; Xiao, F.; Yuldashev, S.; Woo, Y.D.; Kim, D.Y.; Kang, T.W. Arrayed CdTeMicrodots and Their Enhanced Photodetectivity via Piezo-Phototronic Effect. Nanomaterials 2019, 9, 178.

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