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Updating the Role of Reduced Graphene Oxide Ink on Field Emission Devices in Synergy with Charge Transfer Materials

1
Center of Materials Technology and Photonics & Electrical Engineering Department, Technological Educational Institute (TEI) of Crete, Heraklion 71004 Crete, Greece
2
Department of Mineral Resources Engineering, Technical University of Crete, Chania, 73100 Crete, Greece
3
Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas, N. Plastira 100, Heraklion, 70013 Crete, Greece
4
Department of Electronic Engineering Technological Educational Institute (TEI) of Crete, Chania, 73132 Crete, Greece
*
Authors to whom correspondence should be addressed.
These authors contributed equally to this work.
Nanomaterials 2019, 9(2), 137; https://doi.org/10.3390/nano9020137
Received: 10 December 2018 / Revised: 2 January 2019 / Accepted: 14 January 2019 / Published: 22 January 2019
(This article belongs to the Special Issue Optoelectronic Nanodevices)
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Abstract

Hydroiodic acid (HI)-treated reduced graphene oxide (rGO) ink/conductive polymeric composites are considered as promising cold cathodes in terms of high geometrical aspect ratio and low field emission (FE) threshold devices. In this study, four simple, cost-effective, solution-processed approaches for rGO-based field effect emitters were developed, optimized, and compared; rGO layers were coated on (a) n+ doped Si substrate, (b) n+-Si/P3HT:rGO, (c) n+-Si/PCDTBT:rGO, and (d) n+-Si/PCDTBT:PC71BM:rGO composites, respectively. The fabricated emitters were optimized by tailoring the concentration ratios of their preparation and field emission characteristics. In a critical composite ratio, FE performance was remarkably improved compared to the pristine Si, as well as n+-Si/rGO field emitter. In this context, the impact of various materials, such as polymers, fullerene derivatives, as well as different solvents on rGO function reinforcement and consequently on FE performance upon rGO-based composites preparation was investigated. The field emitter consisted of n+-Si/PCDTBT:PC71BM(80%):rGO(20%)/rGO displayed a field enhancement factor of ~2850, with remarkable stability over 20 h and low turn-on field in 0.6 V/μm. High-efficiency graphene-based FE devices realization paves the way towards low-cost, large-scale electron sources development. Finally, the contribution of this hierarchical, composite film morphology was evaluated and discussed. View Full-Text
Keywords: field emission; graphene; reduced graphene oxide; polymer composites; graphene ink; cold cathode; Fowler–Nordheim field emission; graphene; reduced graphene oxide; polymer composites; graphene ink; cold cathode; Fowler–Nordheim
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Stylianakis, M.M.; Viskadouros, G.; Polyzoidis, C.; Veisakis, G.; Kenanakis, G.; Kornilios, N.; Petridis, K.; Kymakis, E. Updating the Role of Reduced Graphene Oxide Ink on Field Emission Devices in Synergy with Charge Transfer Materials. Nanomaterials 2019, 9, 137.

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