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Open AccessFeature PaperArticle

Environmental Effects on the Electrical Characteristics of Back-Gated WSe2 Field-Effect Transistors

1
Physics Department “E. R. Caianiello” and Interdepartmental Centre NanoMates, University of Salerno, via Giovanni Paolo II n. 132, 84084 Fisciano, Italy
2
CNR-SPIN Salerno, via Giovanni Paolo II n. 132, 84084 Fisciano, Italy
3
AMBER & School of Chemistry, Trinity College Dublin, 2 Dublin, Ireland
*
Author to whom correspondence should be addressed.
Nanomaterials 2018, 8(11), 901; https://doi.org/10.3390/nano8110901
Received: 4 October 2018 / Revised: 31 October 2018 / Accepted: 1 November 2018 / Published: 3 November 2018
We study the effect of polymer coating, pressure, temperature, and light on the electrical characteristics of monolayer WSe 2 back-gated transistors with Ni / Au contacts. Our investigation shows that the removal of a layer of poly(methyl methacrylate) (PMMA) or a decrease of the pressure change the device conductivity from p- to n-type. From the temperature behavior of the transistor transfer characteristics, a gate-tunable Schottky barrier at the contacts is demonstrated and a barrier height of ~ 70 meV in the flat-band condition is measured. We also report and discuss a temperature-driven change in the mobility and the subthreshold swing that is used to estimate the trap density at the WSe 2 / SiO 2 interface. Finally, from studying the spectral photoresponse of the WSe 2 , it is proven that the device can be used as a photodetector with a responsivity of ~ 0.5 AW 1 at 700 nm and 0.37 mW / cm 2 optical power. View Full-Text
Keywords: 2D materials; field effect transistors; PMMA; tungsten diselenide 2D materials; field effect transistors; PMMA; tungsten diselenide
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MDPI and ACS Style

Urban, F.; Martucciello, N.; Peters, L.; McEvoy, N.; Di Bartolomeo, A. Environmental Effects on the Electrical Characteristics of Back-Gated WSe2 Field-Effect Transistors. Nanomaterials 2018, 8, 901.

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