Environmental Effects on the Electrical Characteristics of Back-Gated WSe2 Field-Effect Transistors
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Physics Department “E. R. Caianiello” and Interdepartmental Centre NanoMates, University of Salerno, via Giovanni Paolo II n. 132, 84084 Fisciano, Italy
2
CNR-SPIN Salerno, via Giovanni Paolo II n. 132, 84084 Fisciano, Italy
3
AMBER & School of Chemistry, Trinity College Dublin, 2 Dublin, Ireland
*
Author to whom correspondence should be addressed.
Nanomaterials 2018, 8(11), 901; https://doi.org/10.3390/nano8110901
Received: 4 October 2018
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Revised: 31 October 2018
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Accepted: 1 November 2018
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Published: 3 November 2018
(This article belongs to the Special Issue 2D Materials and Van der Waals Heterostructures: Physics and Applications)
We study the effect of polymer coating, pressure, temperature, and light on the electrical characteristics of monolayer back-gated transistors with contacts. Our investigation shows that the removal of a layer of poly(methyl methacrylate) (PMMA) or a decrease of the pressure change the device conductivity from p- to n-type. From the temperature behavior of the transistor transfer characteristics, a gate-tunable Schottky barrier at the contacts is demonstrated and a barrier height of 70 meV in the flat-band condition is measured. We also report and discuss a temperature-driven change in the mobility and the subthreshold swing that is used to estimate the trap density at the interface. Finally, from studying the spectral photoresponse of the , it is proven that the device can be used as a photodetector with a responsivity of at and optical power.
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Keywords:
2D materials; field effect transistors; PMMA; tungsten diselenide
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MDPI and ACS Style
Urban, F.; Martucciello, N.; Peters, L.; McEvoy, N.; Di Bartolomeo, A. Environmental Effects on the Electrical Characteristics of Back-Gated WSe2 Field-Effect Transistors. Nanomaterials 2018, 8, 901. https://doi.org/10.3390/nano8110901
AMA Style
Urban F, Martucciello N, Peters L, McEvoy N, Di Bartolomeo A. Environmental Effects on the Electrical Characteristics of Back-Gated WSe2 Field-Effect Transistors. Nanomaterials. 2018; 8(11):901. https://doi.org/10.3390/nano8110901
Chicago/Turabian StyleUrban, Francesca, Nadia Martucciello, Lisanne Peters, Niall McEvoy, and Antonio Di Bartolomeo. 2018. "Environmental Effects on the Electrical Characteristics of Back-Gated WSe2 Field-Effect Transistors" Nanomaterials 8, no. 11: 901. https://doi.org/10.3390/nano8110901
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