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Journal: Nanomaterials, 2026
Volume: 16
Number: 248
Article:
TCAD Simulation of STI Depth and SiO2/Silicon Interface Trap Modulation Effects on Low-Frequency Noise in HZO-Based Nanosheet FETs
Authors:
by
Wonbok Lee and Jonghwan Lee
Link:
https://www.mdpi.com/2079-4991/16/4/248
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