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Journal: Nanomaterials, 2026
Volume: 16
Number: 248

Article: TCAD Simulation of STI Depth and SiO2/Silicon Interface Trap Modulation Effects on Low-Frequency Noise in HZO-Based Nanosheet FETs
Authors: by Wonbok Lee and Jonghwan Lee
Link: https://www.mdpi.com/2079-4991/16/4/248

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