Wang, Z.; Bai, Z.; Guo, Y.; Ding, C.; Huang, Q.; Gu, L.; Shen, Y.; Zhang, Q.; Ma, H.
Reduction of Interface State Density in 4H-SiC MOS Capacitors Modified by ALD-Deposited Interlayers. Nanomaterials 2025, 15, 555.
https://doi.org/10.3390/nano15070555
AMA Style
Wang Z, Bai Z, Guo Y, Ding C, Huang Q, Gu L, Shen Y, Zhang Q, Ma H.
Reduction of Interface State Density in 4H-SiC MOS Capacitors Modified by ALD-Deposited Interlayers. Nanomaterials. 2025; 15(7):555.
https://doi.org/10.3390/nano15070555
Chicago/Turabian Style
Wang, Zhenyu, Zhaopeng Bai, Yunduo Guo, Chengxi Ding, Qimin Huang, Lin Gu, Yi Shen, Qingchun Zhang, and Hongping Ma.
2025. "Reduction of Interface State Density in 4H-SiC MOS Capacitors Modified by ALD-Deposited Interlayers" Nanomaterials 15, no. 7: 555.
https://doi.org/10.3390/nano15070555
APA Style
Wang, Z., Bai, Z., Guo, Y., Ding, C., Huang, Q., Gu, L., Shen, Y., Zhang, Q., & Ma, H.
(2025). Reduction of Interface State Density in 4H-SiC MOS Capacitors Modified by ALD-Deposited Interlayers. Nanomaterials, 15(7), 555.
https://doi.org/10.3390/nano15070555
