Yugender, P.; Singh, S.; Kumar, K.; Dhar, R.S.; Seteikin, A.Y.; Banerjee, A.; Samusev, I.G.
Development and Performance Analysis of High-K Spacer-Induced Strained Si/SiGe Channel-Based Gate All Around FET for Thermal Effects. Nanomaterials 2025, 15, 1810.
https://doi.org/10.3390/nano15231810
AMA Style
Yugender P, Singh S, Kumar K, Dhar RS, Seteikin AY, Banerjee A, Samusev IG.
Development and Performance Analysis of High-K Spacer-Induced Strained Si/SiGe Channel-Based Gate All Around FET for Thermal Effects. Nanomaterials. 2025; 15(23):1810.
https://doi.org/10.3390/nano15231810
Chicago/Turabian Style
Yugender, Potaraju, Sneha Singh, Kuleen Kumar, Rudra Sankar Dhar, Alexey Y. Seteikin, Amit Banerjee, and Ilia G. Samusev.
2025. "Development and Performance Analysis of High-K Spacer-Induced Strained Si/SiGe Channel-Based Gate All Around FET for Thermal Effects" Nanomaterials 15, no. 23: 1810.
https://doi.org/10.3390/nano15231810
APA Style
Yugender, P., Singh, S., Kumar, K., Dhar, R. S., Seteikin, A. Y., Banerjee, A., & Samusev, I. G.
(2025). Development and Performance Analysis of High-K Spacer-Induced Strained Si/SiGe Channel-Based Gate All Around FET for Thermal Effects. Nanomaterials, 15(23), 1810.
https://doi.org/10.3390/nano15231810
