Gong, P.; Yuan, J.-H.; Wu, G.-P.; Liu, Z.-H.; Wang, H.; Wang, J.
Designing 2D Wide Bandgap Semiconductor B12X2H6 (X=O, S) Based on Aromatic Icosahedral B12. Nanomaterials 2025, 15, 1803.
https://doi.org/10.3390/nano15231803
AMA Style
Gong P, Yuan J-H, Wu G-P, Liu Z-H, Wang H, Wang J.
Designing 2D Wide Bandgap Semiconductor B12X2H6 (X=O, S) Based on Aromatic Icosahedral B12. Nanomaterials. 2025; 15(23):1803.
https://doi.org/10.3390/nano15231803
Chicago/Turabian Style
Gong, Pei, Jun-Hui Yuan, Gen-Ping Wu, Zhi-Hong Liu, Hao Wang, and Jiafu Wang.
2025. "Designing 2D Wide Bandgap Semiconductor B12X2H6 (X=O, S) Based on Aromatic Icosahedral B12" Nanomaterials 15, no. 23: 1803.
https://doi.org/10.3390/nano15231803
APA Style
Gong, P., Yuan, J.-H., Wu, G.-P., Liu, Z.-H., Wang, H., & Wang, J.
(2025). Designing 2D Wide Bandgap Semiconductor B12X2H6 (X=O, S) Based on Aromatic Icosahedral B12. Nanomaterials, 15(23), 1803.
https://doi.org/10.3390/nano15231803