Thermal, Mechanical, and Electrical Stability of Cu Films in an Integration Process with Photosensitive Polyimide (PSPI) Films

Ustad, Ruhan E.; Chavan, Vijay D.; Kim, Honggyun; Shin, Min-ho; Kim, Sung-Kyu; Choi, Kyeong-Keun; Kim, Deok-kee

doi:10.3390/nano13192642

Open AccessCommunication

Thermal, Mechanical, and Electrical Stability of Cu Films in an Integration Process with Photosensitive Polyimide (PSPI) Films

by

Ruhan E. Ustad

^1,†,

Vijay D. Chavan

^2,†,

Honggyun Kim

¹,

Min-ho Shin

³,

Sung-Kyu Kim

³,

Kyeong-Keun Choi

^3,*

and

Deok-kee Kim

^1,2,*

¹

Semiconductor Systems Engineering, Sejong University, Seoul 05006, Republic of Korea

²

Electrical Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea

³

National Institute for Nanomaterials Technology (NINT), Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea

^*

Authors to whom correspondence should be addressed.

^†

These authors contributed equally to this work.

Nanomaterials 2023, 13(19), 2642; https://doi.org/10.3390/nano13192642

Submission received: 11 August 2023 / Revised: 16 September 2023 / Accepted: 23 September 2023 / Published: 26 September 2023

(This article belongs to the Special Issue Nanoelectronics: Materials, Devices and Applications)

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Abstract

Photosensitive polyimides (PSPIs) have been widely developed in microelectronics, which is due to their excellent thermal properties and reasonable dielectric properties and can be directly patterned to simplify the processing steps. In this study, 3 μm~7 μm thick PSPI films were deposited on different substrates, including Si, 50 nm SiN, 50 nm SiO₂, 100 nm Cu, and 100 nm Al, for the optimization of the process of integration with Cu films. In situ temperature-dependent resistance measurements were conducted by using a four-point probe system to study the changes in resistance of the 70 nm thick Cu films on different dielectrics with thick diffusion films of 30 nm Mn, Co, and W films in a N₂ ambient. The lowest possible change in thickness due to annealing at the higher temperature ranges of 325 °C to 375 °C is displayed, which suggests the high stability of PSPI. The PSPI films show good adhesion with each Cu diffusion barrier up to 350 °C, and we believe that this will be helpful for new packaging applications, such as a 3D IC with a Cu interconnect.

Keywords: polyimide; photosensitive; Cu RDL; resistivity; advanced packaging

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MDPI and ACS Style

Ustad, R.E.; Chavan, V.D.; Kim, H.; Shin, M.-h.; Kim, S.-K.; Choi, K.-K.; Kim, D.-k. Thermal, Mechanical, and Electrical Stability of Cu Films in an Integration Process with Photosensitive Polyimide (PSPI) Films. Nanomaterials 2023, 13, 2642. https://doi.org/10.3390/nano13192642

AMA Style

Ustad RE, Chavan VD, Kim H, Shin M-h, Kim S-K, Choi K-K, Kim D-k. Thermal, Mechanical, and Electrical Stability of Cu Films in an Integration Process with Photosensitive Polyimide (PSPI) Films. Nanomaterials. 2023; 13(19):2642. https://doi.org/10.3390/nano13192642

Chicago/Turabian Style

Ustad, Ruhan E., Vijay D. Chavan, Honggyun Kim, Min-ho Shin, Sung-Kyu Kim, Kyeong-Keun Choi, and Deok-kee Kim. 2023. "Thermal, Mechanical, and Electrical Stability of Cu Films in an Integration Process with Photosensitive Polyimide (PSPI) Films" Nanomaterials 13, no. 19: 2642. https://doi.org/10.3390/nano13192642

APA Style

Ustad, R. E., Chavan, V. D., Kim, H., Shin, M.-h., Kim, S.-K., Choi, K.-K., & Kim, D.-k. (2023). Thermal, Mechanical, and Electrical Stability of Cu Films in an Integration Process with Photosensitive Polyimide (PSPI) Films. Nanomaterials, 13(19), 2642. https://doi.org/10.3390/nano13192642

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Thermal, Mechanical, and Electrical Stability of Cu Films in an Integration Process with Photosensitive Polyimide (PSPI) Films

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