Article Versions Notes

Hsieh H-Y, Liou P-W, Yang S, Chen W-C, Liang L-P, Lee Y-C, Yang C-C. Behaviors of AlGaN Strain Relaxation on a GaN Porous Structure Studied with d-Spacing Crystal Lattice Analysis. Nanomaterials. 2023; 13(10):1617. https://doi.org/10.3390/nano13101617

Hsieh, Hao-Yu, Ping-Wei Liou, Shaobo Yang, Wei-Cheng Chen, Li-Ping Liang, Yueh-Chi Lee, and Chih-Chung (C. C.) Yang. 2023. "Behaviors of AlGaN Strain Relaxation on a GaN Porous Structure Studied with d-Spacing Crystal Lattice Analysis" Nanomaterials 13, no. 10: 1617. https://doi.org/10.3390/nano13101617

Hsieh, H.-Y., Liou, P.-W., Yang, S., Chen, W.-C., Liang, L.-P., Lee, Y.-C., & Yang, C.-C. (2023). Behaviors of AlGaN Strain Relaxation on a GaN Porous Structure Studied with d-Spacing Crystal Lattice Analysis. Nanomaterials, 13(10), 1617. https://doi.org/10.3390/nano13101617