Theoretical Optical Output Power Improvement of InGaN-Based Violet Laser Diode Using AlGaN/GaN Composite Last Quantum Barrier

Zhang, Zhenzhuo; Yang, Jing; Zhao, Degang; Liang, Feng; Chen, Ping; Liu, Zongshun

doi:10.3390/nano12223990

Open AccessArticle

Theoretical Optical Output Power Improvement of InGaN-Based Violet Laser Diode Using AlGaN/GaN Composite Last Quantum Barrier

by

Zhenzhuo Zhang

^1,2

,

Jing Yang

^1,*,

Degang Zhao

^1,3,*,

Feng Liang

¹,

Ping Chen

¹ and

Zongshun Liu

¹

State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China

²

College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

³

Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

^*

Authors to whom correspondence should be addressed.

Nanomaterials 2022, 12(22), 3990; https://doi.org/10.3390/nano12223990

Submission received: 15 October 2022 / Revised: 2 November 2022 / Accepted: 10 November 2022 / Published: 12 November 2022

(This article belongs to the Special Issue Advanced Semiconductor Nanomaterials for Electronic and Optoelectronic Applications)

Download

Browse Figures

Versions Notes

Abstract

Electron leakage has an adverse influence on the optical output power for laser diodes (LDs), especially where the conventional last quantum barrier (LQB) in the multiple quantum well (MQW) active region may cause severe leakage problems. In this article, a composite last quantum barrier (CLQB) composed of p-type doped AlGaN (p-AlGaN) and unintentionally doped GaN (u-GaN) layers is designed to replace the conventional one, for overcoming the problem of electron overflow. Theoretical calculations with LASTIP software demonstrate that CLQB with optimized parameters of Al composition, thickness and p-type doping concentration of the p-AlGaN layer in the CLQB can have a 50% improvement in slope efficiency (SE) compared with the conventional structure LD. This will help to realize a higher optical output power in InGaN-based violet LDs.

Keywords: InGaN-based laser diodes; optical output power; slope efficiency; quantum barrier; electron leakage; hole injection

Share and Cite

MDPI and ACS Style

Zhang, Z.; Yang, J.; Zhao, D.; Liang, F.; Chen, P.; Liu, Z. Theoretical Optical Output Power Improvement of InGaN-Based Violet Laser Diode Using AlGaN/GaN Composite Last Quantum Barrier. Nanomaterials 2022, 12, 3990. https://doi.org/10.3390/nano12223990

AMA Style

Zhang Z, Yang J, Zhao D, Liang F, Chen P, Liu Z. Theoretical Optical Output Power Improvement of InGaN-Based Violet Laser Diode Using AlGaN/GaN Composite Last Quantum Barrier. Nanomaterials. 2022; 12(22):3990. https://doi.org/10.3390/nano12223990

Chicago/Turabian Style

Zhang, Zhenzhuo, Jing Yang, Degang Zhao, Feng Liang, Ping Chen, and Zongshun Liu. 2022. "Theoretical Optical Output Power Improvement of InGaN-Based Violet Laser Diode Using AlGaN/GaN Composite Last Quantum Barrier" Nanomaterials 12, no. 22: 3990. https://doi.org/10.3390/nano12223990

APA Style

Zhang, Z., Yang, J., Zhao, D., Liang, F., Chen, P., & Liu, Z. (2022). Theoretical Optical Output Power Improvement of InGaN-Based Violet Laser Diode Using AlGaN/GaN Composite Last Quantum Barrier. Nanomaterials, 12(22), 3990. https://doi.org/10.3390/nano12223990

Note that from the first issue of 2016, this journal uses article numbers instead of page numbers. See further details here.

Article Menu

Theoretical Optical Output Power Improvement of InGaN-Based Violet Laser Diode Using AlGaN/GaN Composite Last Quantum Barrier

Abstract

Share and Cite

Article Metrics

Article Access Statistics

Further Information

Guidelines

MDPI Initiatives

Follow MDPI