Lan, L.; Ding, C.; He, P.; Su, H.; Huang, B.; Xu, J.; Zhang, S.; Peng, J.
The Mechanism of the Photostability Enhancement of Thin-Film Transistors Based on Solution-Processed Oxide Semiconductors Doped with Tetravalent Lanthanides. Nanomaterials 2022, 12, 3902.
https://doi.org/10.3390/nano12213902
AMA Style
Lan L, Ding C, He P, Su H, Huang B, Xu J, Zhang S, Peng J.
The Mechanism of the Photostability Enhancement of Thin-Film Transistors Based on Solution-Processed Oxide Semiconductors Doped with Tetravalent Lanthanides. Nanomaterials. 2022; 12(21):3902.
https://doi.org/10.3390/nano12213902
Chicago/Turabian Style
Lan, Linfeng, Chunchun Ding, Penghui He, Huimin Su, Bo Huang, Jintao Xu, Shuguang Zhang, and Junbiao Peng.
2022. "The Mechanism of the Photostability Enhancement of Thin-Film Transistors Based on Solution-Processed Oxide Semiconductors Doped with Tetravalent Lanthanides" Nanomaterials 12, no. 21: 3902.
https://doi.org/10.3390/nano12213902
APA Style
Lan, L., Ding, C., He, P., Su, H., Huang, B., Xu, J., Zhang, S., & Peng, J.
(2022). The Mechanism of the Photostability Enhancement of Thin-Film Transistors Based on Solution-Processed Oxide Semiconductors Doped with Tetravalent Lanthanides. Nanomaterials, 12(21), 3902.
https://doi.org/10.3390/nano12213902