Hwang, Y.-J.; Kim, D.-K.; Jeon, S.-H.; Wang, Z.; Park, J.; Lee, S.-H.; Jang, J.; Kang, I.M.; Bae, J.-H.
Importance of Structural Relaxation on the Electrical Characteristics and Bias Stability of Solution-Processed ZnSnO Thin-Film Transistors. Nanomaterials 2022, 12, 3097.
https://doi.org/10.3390/nano12183097
AMA Style
Hwang Y-J, Kim D-K, Jeon S-H, Wang Z, Park J, Lee S-H, Jang J, Kang IM, Bae J-H.
Importance of Structural Relaxation on the Electrical Characteristics and Bias Stability of Solution-Processed ZnSnO Thin-Film Transistors. Nanomaterials. 2022; 12(18):3097.
https://doi.org/10.3390/nano12183097
Chicago/Turabian Style
Hwang, Yu-Jin, Do-Kyung Kim, Sang-Hwa Jeon, Ziyuan Wang, Jaehoon Park, Sin-Hyung Lee, Jaewon Jang, In Man Kang, and Jin-Hyuk Bae.
2022. "Importance of Structural Relaxation on the Electrical Characteristics and Bias Stability of Solution-Processed ZnSnO Thin-Film Transistors" Nanomaterials 12, no. 18: 3097.
https://doi.org/10.3390/nano12183097
APA Style
Hwang, Y.-J., Kim, D.-K., Jeon, S.-H., Wang, Z., Park, J., Lee, S.-H., Jang, J., Kang, I. M., & Bae, J.-H.
(2022). Importance of Structural Relaxation on the Electrical Characteristics and Bias Stability of Solution-Processed ZnSnO Thin-Film Transistors. Nanomaterials, 12(18), 3097.
https://doi.org/10.3390/nano12183097
