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Journal: Nanomaterials, 2021
Volume: 11
Number: 1361
1361
Article: Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs₂AgBiBr₆-Based Memory Device
Authors: by Fengzhen Lv, Tingting Zhong, Yongfu Qin, Haijun Qin, Wenfeng Wang, Fuchi Liu and Wenjie Kong
Link: https://www.mdpi.com/2079-4991/11/6/1361

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