Anisotropy of the In-Plane and Out-of-Plane Resistivity and the Hall Effect in the Normal State of Vicinal-Grown YBa2Cu3O7−δ Thin Films
Abstract
1. Introduction
2. Materials and Methods
2.1. Sample Preparation
2.2. Transport Measurements
2.3. Calculation of the Anisotropic Transport Properties
2.3.1. Evaluation of Diagonal Resistivity Tensor Elements
2.3.2. Evaluation of Off-Diagonal (Hall) Tensor Elements
3. Results and Discussion
4. Conclusions
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
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Heine, G.; Lang, W.; Rössler, R.; Pedarnig, J.D. Anisotropy of the In-Plane and Out-of-Plane Resistivity and the Hall Effect in the Normal State of Vicinal-Grown YBa2Cu3O7−δ Thin Films. Nanomaterials 2021, 11, 675. https://doi.org/10.3390/nano11030675
Heine G, Lang W, Rössler R, Pedarnig JD. Anisotropy of the In-Plane and Out-of-Plane Resistivity and the Hall Effect in the Normal State of Vicinal-Grown YBa2Cu3O7−δ Thin Films. Nanomaterials. 2021; 11(3):675. https://doi.org/10.3390/nano11030675
Chicago/Turabian StyleHeine, Gernot, Wolfgang Lang, Roman Rössler, and Johannes D. Pedarnig. 2021. "Anisotropy of the In-Plane and Out-of-Plane Resistivity and the Hall Effect in the Normal State of Vicinal-Grown YBa2Cu3O7−δ Thin Films" Nanomaterials 11, no. 3: 675. https://doi.org/10.3390/nano11030675
APA StyleHeine, G., Lang, W., Rössler, R., & Pedarnig, J. D. (2021). Anisotropy of the In-Plane and Out-of-Plane Resistivity and the Hall Effect in the Normal State of Vicinal-Grown YBa2Cu3O7−δ Thin Films. Nanomaterials, 11(3), 675. https://doi.org/10.3390/nano11030675