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Article

Plasma-Enhanced Atomic Layer Deposition of TiN Thin Films as an Effective Se Diffusion Barrier for CIGS Solar Cells

1
School of Materials Science and Engineering, Pusan National University, Busan 46241, Korea
2
Home Appliance & Air Solution Company R&D Center, LG Electronics, 170 Seongsanpaechong-Ro, Seongsan-Gu, Changwon-Si, Geyeongsangnam-Do 51533, Korea
3
Advanced Energy Materials and Components R&D Group, Korea Institute of Industrial Technology (KITECH), Busan 33032, Korea
*
Authors to whom correspondence should be addressed.
H.-J.W., W.-J.L. and E.-K.K. contributed equally to this paper.
Academic Editor: Henrich Frielinghaus
Nanomaterials 2021, 11(2), 370; https://doi.org/10.3390/nano11020370
Received: 4 January 2021 / Revised: 23 January 2021 / Accepted: 28 January 2021 / Published: 2 February 2021
(This article belongs to the Special Issue Nanomaterials for Energy Conversion and Catalytic Applications)
Plasma-enhanced atomic layer deposition (PEALD) of TiN thin films were investigated as an effective Se diffusion barrier layer for Cu (In, Ga) Se2 (CIGS) solar cells. Before the deposition of TiN thin film on CIGS solar cells, a saturated growth rate of 0.67 Å/cycle was confirmed using tetrakis(dimethylamido)titanium (TDMAT) and N2 plasma at 200 °C. Then, a Mo (≈30 nm)/PEALD-TiN (≈5 nm)/Mo (≈600 nm) back contact stack was fabricated to investigate the effects of PEALD-TiN thin films on the Se diffusion. After the selenization process, it was revealed that ≈5 nm-thick TiN thin films can effectively block Se diffusion and that only the top Mo layer prepared on the TiN thin films reacted with Se to form a MoSe2 layer. Without the TiN diffusion barrier layer, however, Se continuously diffused along the grain boundaries of the entire Mo back contact electrode. Finally, the adoption of a TiN diffusion barrier layer improved the photovoltaic efficiency of the CIGS solar cell by approximately 10%. View Full-Text
Keywords: CIGS solar cells; plasma-enhanced atomic layer deposition; TiN; Se diffusion barrier CIGS solar cells; plasma-enhanced atomic layer deposition; TiN; Se diffusion barrier
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MDPI and ACS Style

Woo, H.-J.; Lee, W.-J.; Koh, E.-K.; Jang, S.I.; Kim, S.; Moon, H.; Kwon, S.-H. Plasma-Enhanced Atomic Layer Deposition of TiN Thin Films as an Effective Se Diffusion Barrier for CIGS Solar Cells. Nanomaterials 2021, 11, 370. https://doi.org/10.3390/nano11020370

AMA Style

Woo H-J, Lee W-J, Koh E-K, Jang SI, Kim S, Moon H, Kwon S-H. Plasma-Enhanced Atomic Layer Deposition of TiN Thin Films as an Effective Se Diffusion Barrier for CIGS Solar Cells. Nanomaterials. 2021; 11(2):370. https://doi.org/10.3390/nano11020370

Chicago/Turabian Style

Woo, Hyun-Jae, Woo-Jae Lee, Eun-Kyong Koh, Seung I. Jang, Shinho Kim, Hyoungseok Moon, and Se-Hun Kwon. 2021. "Plasma-Enhanced Atomic Layer Deposition of TiN Thin Films as an Effective Se Diffusion Barrier for CIGS Solar Cells" Nanomaterials 11, no. 2: 370. https://doi.org/10.3390/nano11020370

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