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Article

Temperature Dependence of Carrier Extraction Processes in GaSb/AlGaAs Quantum Nanostructure Intermediate-Band Solar Cells

1
Global Zero Emission Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
2
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, Meguro-ku, Tokyo 153-8904, Japan
*
Author to whom correspondence should be addressed.
Academic Editor: Efrat Lifshitz
Nanomaterials 2021, 11(2), 344; https://doi.org/10.3390/nano11020344
Received: 28 December 2020 / Revised: 19 January 2021 / Accepted: 25 January 2021 / Published: 29 January 2021
(This article belongs to the Special Issue Nanostructured Materials for Solar Cell Applications)
From the viewpoint of band engineering, the use of GaSb quantum nanostructures is expected to lead to highly efficient intermediate-band solar cells (IBSCs). In IBSCs, current generation via two-step optical excitations through the intermediate band is the key to the operating principle. This mechanism requires the formation of a strong quantum confinement structure. Therefore, we focused on the material system with GaSb quantum nanostructures embedded in AlGaAs layers. However, studies involving crystal growth of GaSb quantum nanostructures on AlGaAs layers have rarely been reported. In our work, we fabricated GaSb quantum dots (QDs) and quantum rings (QRs) on AlGaAs layers via molecular-beam epitaxy. Using the Stranski–Krastanov growth mode, we demonstrated that lens-shaped GaSb QDs can be fabricated on AlGaAs layers. In addition, atomic force microscopy measurements revealed that GaSb QDs could be changed to QRs under irradiation with an As molecular beam even when they were deposited onto AlGaAs layers. We also investigated the suitability of GaSb/AlGaAs QDSCs and QRSCs for use in IBSCs by evaluating the temperature characteristics of their external quantum efficiency. For the GaSb/AlGaAs material system, the QDSC was found to have slightly better two-step optical excitation temperature characteristics than the QRSC. View Full-Text
Keywords: intermediate-band solar cell; quantum dot; molecular-beam epitaxy intermediate-band solar cell; quantum dot; molecular-beam epitaxy
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MDPI and ACS Style

Shoji, Y.; Tamaki, R.; Okada, Y. Temperature Dependence of Carrier Extraction Processes in GaSb/AlGaAs Quantum Nanostructure Intermediate-Band Solar Cells. Nanomaterials 2021, 11, 344. https://doi.org/10.3390/nano11020344

AMA Style

Shoji Y, Tamaki R, Okada Y. Temperature Dependence of Carrier Extraction Processes in GaSb/AlGaAs Quantum Nanostructure Intermediate-Band Solar Cells. Nanomaterials. 2021; 11(2):344. https://doi.org/10.3390/nano11020344

Chicago/Turabian Style

Shoji, Yasushi, Ryo Tamaki, and Yoshitaka Okada. 2021. "Temperature Dependence of Carrier Extraction Processes in GaSb/AlGaAs Quantum Nanostructure Intermediate-Band Solar Cells" Nanomaterials 11, no. 2: 344. https://doi.org/10.3390/nano11020344

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