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Journal: Nanomaterials, 2021
Volume: 11
Number: 309
309
Article: Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs
Authors: by Jie Gu, Qingzhu Zhang, Zhenhua Wu, Jiaxin Yao, Zhaohao Zhang, Xiaohui Zhu, Guilei Wang, Junjie Li, Yongkui Zhang, Yuwei Cai, Renren Xu, Gaobo Xu, Qiuxia Xu, Huaxiang Yin, Jun Luo, Wenwu Wang and Tianchun Ye
Link: https://www.mdpi.com/2079-4991/11/2/309

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