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Open AccessArticle

Tunable Optical Properties of Amorphous-Like Ga2O3 Thin Films Deposited by Electron-Beam Evaporation with Varying Oxygen Partial Pressures

Shaanxi Province Key Lab of Thin Films Technology and Optical Test, School of Photo-Electrical Engineering, Xi’an Technological University, Xi’an 710021, China
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Nanomaterials 2020, 10(9), 1760; https://doi.org/10.3390/nano10091760
Received: 1 August 2020 / Revised: 3 September 2020 / Accepted: 3 September 2020 / Published: 6 September 2020
(This article belongs to the Special Issue Ga2O3-Based Nanomaterials)
Ga2O3 thin films were fabricated by the electron-beam evaporation technique at a varying oxygen partial pressure from 0 to 2.0 × 10−2 Pa. The effect of oxygen partial pressure on the crystalline structure and optical properties of the Ga2O3 films was analyzed using sophisticated techniques including X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Raman spectroscopy, spectroscopic ellipsometry, ultraviolet-visible spectroscopy and a laser-induced damage test system. The correlation between the oxygen partial pressure and the film’s properties in optics and materials were investigated. XRD and Raman revealed that all films were amorphous in spite of applying a varying oxygen partial pressure. With the change of oxygen partial pressure, XPS data indicated that the content of oxygen in the Ga2O3 films could be broadly modulable. As a result, a changeable refractive index of the Ga2O3 film is realizable and a variable blue-shift of absorption edges in transmittance spectra of the films is achievable. Moreover, the damage threshold value varied from 0.41 to 7.51 J/cm2 according to the rise of oxygen partial pressure. These results demonstrated that the optical properties of Ga2O3 film can be broadly tunable by controlling the oxygen content in the film. View Full-Text
Keywords: Ga2O3 film; electron-beam evaporation; optical properties Ga2O3 film; electron-beam evaporation; optical properties
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MDPI and ACS Style

Li, S.; Yang, C.; Zhang, J.; Dong, L.; Cai, C.; Liang, H.; Liu, W. Tunable Optical Properties of Amorphous-Like Ga2O3 Thin Films Deposited by Electron-Beam Evaporation with Varying Oxygen Partial Pressures. Nanomaterials 2020, 10, 1760. https://doi.org/10.3390/nano10091760

AMA Style

Li S, Yang C, Zhang J, Dong L, Cai C, Liang H, Liu W. Tunable Optical Properties of Amorphous-Like Ga2O3 Thin Films Deposited by Electron-Beam Evaporation with Varying Oxygen Partial Pressures. Nanomaterials. 2020; 10(9):1760. https://doi.org/10.3390/nano10091760

Chicago/Turabian Style

Li, Shijie; Yang, Chen; Zhang, Jin; Dong, Linpeng; Cai, Changlong; Liang, Haifeng; Liu, Weiguo. 2020. "Tunable Optical Properties of Amorphous-Like Ga2O3 Thin Films Deposited by Electron-Beam Evaporation with Varying Oxygen Partial Pressures" Nanomaterials 10, no. 9: 1760. https://doi.org/10.3390/nano10091760

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