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Open AccessArticle

Yb:MoO3/Ag/MoO3 Multilayer Transparent Top Cathode for Top-Emitting Green Quantum Dot Light-Emitting Diodes

AU Optronics Corporation, Hsinchu 30078, Taiwan
Department of Electrical Engineering, National United University, Miaoli 36003, Taiwan
Author to whom correspondence should be addressed.
Nanomaterials 2020, 10(4), 663;
Received: 16 March 2020 / Revised: 28 March 2020 / Accepted: 30 March 2020 / Published: 2 April 2020
(This article belongs to the Special Issue Quantum Dots and Micro-LED Display)
In this study, we report on the application of a dielectric/ultra-thin metal/dielectric (DMD) multilayer consisting of ytterbium (Yb)-doped molybdenum oxide (MoO3)/silver (Ag)/MoO3 stacked as the transparent cathode in top-emitting green quantum dot light-emitting diodes (QLED). By optimizing the Yb doping ratio, we have highly improved the electron injection ability from 0.01 to 0.35. In addition, the dielectric/ultra-thin metal/dielectric (DMD) cathode also shows a low sheet resistance of only 12.2 Ω/sq, which is superior to the resistance of the commercially-available indium tin oxide (ITO) electrode (~15 Ω/sq). The DMD multilayer exhibits a maximum transmittance of 75% and an average transmittance of 70% over the visible range of 400–700 nm. The optimized DMD-based G-QLED has a smaller current leakage at low driving voltage. The optimized DMD-based G-QLED enhances the current density than that of G-QLED with indium zinc oxide (IZO) as a cathode. The fabricated DMD-based G-QLED shows a low turn-on voltage of 2.2 V, a high current efficiency of 38 cd/A, and external quantum efficiency of 9.8. These findings support the fabricated DMD multilayer as a promising cathode for transparent top-emitting diodes. View Full-Text
Keywords: QLEDs; top-emission; DMD; transparent cathode QLEDs; top-emission; DMD; transparent cathode
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Lee, C.-Y.; Chen, Y.-M.; Deng, Y.-Z.; Kuo, Y.-P.; Chen, P.-Y.; Tsai, L.; Lin, M.-Y. Yb:MoO3/Ag/MoO3 Multilayer Transparent Top Cathode for Top-Emitting Green Quantum Dot Light-Emitting Diodes. Nanomaterials 2020, 10, 663.

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