Next Article in Journal
Gold Nanoparticles Mediate Improved Detection of β-amyloid Aggregates by Fluorescence
Previous Article in Journal
Bimetallic Core–Shell Nanoparticles of Gold and Silver via Bioinspired Polydopamine Layer as Surface-Enhanced Raman Spectroscopy (SERS) Platform
Previous Article in Special Issue
Yb:MoO3/Ag/MoO3 Multilayer Transparent Top Cathode for Top-Emitting Green Quantum Dot Light-Emitting Diodes
Open AccessArticle

Investigation of Electrical Properties and Reliability of GaN-Based Micro-LEDs

by Ke Zhang 1,2, Yibo Liu 1, Hoi-sing Kwok 1,2 and Zhaojun Liu 1,2,*
1
Department of Electrical and Electronic Engineering, The Southern University of Science and Technology, Shenzhen 518000, China
2
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong SAR 999077, China
*
Author to whom correspondence should be addressed.
Nanomaterials 2020, 10(4), 689; https://doi.org/10.3390/nano10040689
Received: 21 February 2020 / Revised: 19 March 2020 / Accepted: 24 March 2020 / Published: 6 April 2020
(This article belongs to the Special Issue Quantum Dots and Micro-LED Display)
In this paper, we report high-performance Micro-LEDs on sapphire substrates, with pixel size scaling to 20 µm and an ultra-high current density of 9902 A/cm2. The forward voltages (VF) of the devices ranged from 2.32 V to 2.39 V under an injection current density of 10 A/cm2. The size and structure-dependent effects were subsequently investigated to optimize the device design. The reliability of Micro-LED devices was evaluated under long-aging, high-temperature, and high-humidity conditions. It was found that Micro-LED devices can maintain comparable performance with an emission wavelength of about 445 nm and a full width at half maximum (FWHM) of 22 nm under extreme environments. Following this, specific analysis with four detailed factors of forward voltage, forward current, slope, and leakage current was carried out in order to show the influence of the different environments on different aspects of the devices. View Full-Text
Keywords: GaN-based micro-LEDs; reliability test; micro-LED display GaN-based micro-LEDs; reliability test; micro-LED display
Show Figures

Figure 1

MDPI and ACS Style

Zhang, K.; Liu, Y.; Kwok, H.-S.; Liu, Z. Investigation of Electrical Properties and Reliability of GaN-Based Micro-LEDs. Nanomaterials 2020, 10, 689.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Search more from Scilit
 
Search
Back to TopTop