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Open AccessArticle

Low Voltage Graphene-Based Amplitude Modulator for High Efficiency Terahertz Modulation

1
Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China
2
University of Chinese Academy of Sciences, Beijing 100049, China
3
Key Laboratory of Micro Nano Optoelectronic Devices and Intelligent Perception Systems, Yangtze Normal University, Chongqing 408100, China
*
Authors to whom correspondence should be addressed.
Nanomaterials 2020, 10(3), 585; https://doi.org/10.3390/nano10030585
Received: 25 February 2020 / Revised: 19 March 2020 / Accepted: 20 March 2020 / Published: 23 March 2020
(This article belongs to the Special Issue Characterization, Synthesis and Applications of 2D Nanomaterials)
In this paper, a high-efficiency terahertz amplitude modulation device based on a field-effect transistor has been proposed. The polarization insensitive modulator is designed to achieve a maximum experimental modulation depth of about 53% within 5 V of gate voltages using monolayer graphene. Moreover, the manufacturing processes are inexpensive. Two methods are adopted to improve modulation performance. For one thing, the metal metamaterial designed can effectively enhance the electromagnetic field near single-layer graphene and therefore greatly promote the graphene’s modulation ability in terahertz. For another, polyethylene oxide-based electrolytes (PEO:LiClO4) acts as a high-capacity donor, which makes it possible to dope single-layer graphene at a relatively low voltage. View Full-Text
Keywords: terahertz; amplitude modulation; transmittance; single-layer graphene; metamaterial; solid electrolyte; field-effect transistor terahertz; amplitude modulation; transmittance; single-layer graphene; metamaterial; solid electrolyte; field-effect transistor
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MDPI and ACS Style

Zheng, Q.; Xia, L.; Tang, L.; Du, C.; Cui, H. Low Voltage Graphene-Based Amplitude Modulator for High Efficiency Terahertz Modulation. Nanomaterials 2020, 10, 585.

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