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Open AccessArticle

Effects of Annealing on Characteristics of Cu2ZnSnSe4/CH3NH3PbI3/ZnS/IZO Nanostructures for Enhanced Photovoltaic Solar Cells

1
Institute of Electro-Optical Engineering, Department of Electronic Engineering, Chang Gung University, Taoyuan 333, Taiwan
2
Chang Gung Memorial Hospital, Keelung 204, Taiwan
3
Department of Electro-Optical Engineering, National Taipei University of Technology, Taipei 106, Taiwan
*
Author to whom correspondence should be addressed.
Nanomaterials 2020, 10(3), 521; https://doi.org/10.3390/nano10030521
Received: 30 January 2020 / Revised: 23 February 2020 / Accepted: 10 March 2020 / Published: 13 March 2020
This paper presents new photovoltaic solar cells with Cu2ZnSnSe4/CH3NH3PbI3(MAPbI3)/ZnS/IZO/Ag nanostructures on bi-layer Mo/FTO (fluorine-doped tin oxide) glasssubstrates. The hole-transporting layer, active absorber layer, electron-transporting layer, transparent-conductive oxide layer, and top electrode-metal contact layer, were made of Cu2ZnSnSe4, MAPbI3 perovskite, zincsulfide, indium-doped zinc oxide, and silver, respectively. The active absorber MAPbI3 perovskite film was deposited on Cu2ZnSnSe4 hole-transporting layer that has been annealed at different temperatures. TheseCu2ZnSnSe4 filmsexhibitedthe morphology with increased crystal grain sizesand reduced pinholes, following the increased annealing temperature. When the perovskitefilm thickness was designed at 700 nm, the Cu2ZnSnSe4 hole-transporting layer was 160 nm, and the IZO (indium-zinc oxide) at 100 nm, and annealed at 650 °C, the experimental results showed significant improvements in the solar cell characteristics. The open-circuit voltage was increased to 1.1 V, the short-circuit current was improved to 20.8 mA/cm2, and the device fill factor was elevated to 76.3%. In addition, the device power-conversion efficiency has been improved to 17.4%. The output power Pmax was as good as 1.74 mW and the device series-resistance was 17.1 Ω. View Full-Text
Keywords: CZTSe; hole-transporting material; perovskite; IZO; magnetron sputtering CZTSe; hole-transporting material; perovskite; IZO; magnetron sputtering
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Tseng, C.-C.; Wu, G.; Chang, L.-B.; Jeng, M.-J.; Feng, W.-S.; Chen, D.W.; Chen, L.-C.; Lee, K.-L. Effects of Annealing on Characteristics of Cu2ZnSnSe4/CH3NH3PbI3/ZnS/IZO Nanostructures for Enhanced Photovoltaic Solar Cells. Nanomaterials 2020, 10, 521.

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