Elucidating the Effect of Etching Time Key-Parameter toward Optically and Electrically-Active Silicon Nanowires
Abstract
:1. Introduction
2. Materials and Methods
2.1. Reagents and Materials
2.2. Samples Preparation
2.3. Characterizations
3. Results and Discussion
3.1. Detailed Mechanism of SiNWs’ Formation
3.2. Etching Time Effect on Morphology of SiNW Arrays
3.3. Photoluminescence Spectroscopy
3.4. FTIR Analysis
3.5. Reflectance Analysis
3.6. I–V Measurements
4. Conclusions
Author Contributions
Funding
Acknowledgments
Conflicts of Interest
References
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Constants | Valenta et al. [39] | Yan et al. [40] | Gonchar et al. [41] | Bahera et al. [19] |
---|---|---|---|---|
C (eV nm−2) | 2.49 | 4 | 3.73 | 2.4 |
α | 0.91 | 1.4 | 1.39 | 1.7 |
d (nm) | 4.25 | 3.59 | 3.45 | 2.12 |
Ln (I) vs. V (TE model) | Cheung’s Functions | ||||
---|---|---|---|---|---|
Etching Time | Is (µA) | η | (eV) | RS (kΩ) | η |
20 min | 0.211 | 5.91 | 0.806 | 93.65 | 3.65 |
40 min | 0.495 | 5.31 | 0.790 | 32.10 | 3.56 |
60 min | 0.695 | 4.38 | 0.771 | 25.06 | 2.60 |
80 min | 0.566 | 6.17 | 0.768 | 41.75 | 3.10 |
100 min | 0.239 | 6.05 | 0.801 | 86.33 | 4.08 |
120 min | 0.224 | 6.41 | 0.804 | 33.01 | 4.53 |
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Naffeti, M.; Postigo, P.A.; Chtourou, R.; Zaïbi, M.A. Elucidating the Effect of Etching Time Key-Parameter toward Optically and Electrically-Active Silicon Nanowires. Nanomaterials 2020, 10, 404. https://doi.org/10.3390/nano10030404
Naffeti M, Postigo PA, Chtourou R, Zaïbi MA. Elucidating the Effect of Etching Time Key-Parameter toward Optically and Electrically-Active Silicon Nanowires. Nanomaterials. 2020; 10(3):404. https://doi.org/10.3390/nano10030404
Chicago/Turabian StyleNaffeti, Mariem, Pablo Aitor Postigo, Radhouane Chtourou, and Mohamed Ali Zaïbi. 2020. "Elucidating the Effect of Etching Time Key-Parameter toward Optically and Electrically-Active Silicon Nanowires" Nanomaterials 10, no. 3: 404. https://doi.org/10.3390/nano10030404