Synthesis and Characterization of CuIn1−xGaxSe2 Semiconductor Nanocrystals
Abstract
:1. Introduction
2. Materials and Methods
3. Results and Discussion
3.1. Structural Properties
3.2. Morphological Properties
3.3. Determination of Band Gap Energy
3.4. Raman Analysis
4. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
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Sample | Nominal x | d112 (Å) | a (Å) | c (Å) | Estimated x | Crystallite Size (nm) | Gap Energy (eV) | Raman Shift (cm−1) |
---|---|---|---|---|---|---|---|---|
A | 0 | 3.362 | 5.794 | 11.764 | 0 | 15.528 | 1.108 ± 0.01 | 177.97 ± 1.52 |
B | 0.125 | 3.353 | 5.782 | 11.721 | 0.075 | 16.711 | 1.175 ± 0.01 | 179.32 ± 0.53 |
C | 0.25 | 3.351 | 5.779 | 11.712 | 0.091 | 15.533 | 1.177 ± 0.01 | 180.34 ± 1.29 |
D | 0.375 | 3.323 | 5.745 | 11.555 | 0.353 | 15.530 | 1.250 ± 0.01 | 181.44 ± 1.10 |
E | 0.5 | 3.311 | 5.743 | 11.438 | 0.517 | 15.537 | 1.307 ± 0.01 | 181.94 ± 0.48 |
F | 0.625 | 3.302 | 5.722 | 11.424 | 0.564 | 11.501 | 1.409 ± 0.01 | 182.41 ± 0.53 |
G | 0.75 | 3.288 | 5.693 | 11.391 | 0.648 | 13.659 | 1.476 ± 0.01 | 182.90 ± 0.48 |
H | 0.875 | 3.247 | 5.628 | 11.232 | 0.956 | 12.818 | 1.709 ± 0.01 | 183.76 ± 0.68 |
I | 1 | 3.237 | 5.604 | 11.223 | 1 | 17.,442 | 1.719 ± 0.01 | 186.03 ± 0.86 |
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Shih, Y.-T.; Tsai, Y.-C.; Lin, D.-Y. Synthesis and Characterization of CuIn1−xGaxSe2 Semiconductor Nanocrystals. Nanomaterials 2020, 10, 2066. https://doi.org/10.3390/nano10102066
Shih Y-T, Tsai Y-C, Lin D-Y. Synthesis and Characterization of CuIn1−xGaxSe2 Semiconductor Nanocrystals. Nanomaterials. 2020; 10(10):2066. https://doi.org/10.3390/nano10102066
Chicago/Turabian StyleShih, Yu-Tai, Yu-Ching Tsai, and Der-Yu Lin. 2020. "Synthesis and Characterization of CuIn1−xGaxSe2 Semiconductor Nanocrystals" Nanomaterials 10, no. 10: 2066. https://doi.org/10.3390/nano10102066