Next Article in Journal
Energy Management for Smart Homes—State of the Art
Next Article in Special Issue
III-Nitride Multi-Quantum-Well Light Emitting Structures with Selective Carrier Injection
Previous Article in Journal
Docking Control of an Autonomous Underwater Vehicle Using Reinforcement Learning
Previous Article in Special Issue
Coherent Perfect Absorption Laser Points in One-Dimensional Anti-Parity–Time-Symmetric Photonic Crystals
 
 
Font Type:
Arial Georgia Verdana
Font Size:
Aa Aa Aa
Line Spacing:
Column Width:
Background:
Article

Light Extraction Enhancement of InGaN Based Micro Light-Emitting Diodes with Concave-Convex Circular Composite Structure Sidewall

1
Engineering Research Center for Optoelectronics of Guangdong Province, School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China
2
Zhongshan Institute of Modern Industrial Technology, South China University of Technology, Zhongshan 528437, China
*
Author to whom correspondence should be addressed.
Appl. Sci. 2019, 9(17), 3458; https://doi.org/10.3390/app9173458
Submission received: 12 July 2019 / Revised: 14 August 2019 / Accepted: 16 August 2019 / Published: 21 August 2019
(This article belongs to the Special Issue Novel and Efficient Semiconductor-based Light Sources)

Abstract

We demonstrate that the concave-convex circular composite structure sidewall prepared by inductively coupled plasma (ICP) etching is an effective approach to increase the light efficiency without deteriorating the electrical characteristics for micro light-emitting diodes (LEDs). The saturated light output power of the device using the concave-convex circular composite structure sidewalls with a radius of 2 μm is 39.75 mW, an improvement of 7.2% compared with that of the device using flat sidewalls. The enhanced light output characteristics are primarily attributed to the increased photon emitting due by decreasing the total internal reflection without losing the active region area.
Keywords: InGaN/GaN; micro-LEDs; concave-convex circular composite structure sidewall; ICP; light extraction efficiency InGaN/GaN; micro-LEDs; concave-convex circular composite structure sidewall; ICP; light extraction efficiency
Graphical Abstract

Share and Cite

MDPI and ACS Style

Tan, L.; Zhou, Q.; Hu, W.; Wang, H.; Yao, R. Light Extraction Enhancement of InGaN Based Micro Light-Emitting Diodes with Concave-Convex Circular Composite Structure Sidewall. Appl. Sci. 2019, 9, 3458. https://doi.org/10.3390/app9173458

AMA Style

Tan L, Zhou Q, Hu W, Wang H, Yao R. Light Extraction Enhancement of InGaN Based Micro Light-Emitting Diodes with Concave-Convex Circular Composite Structure Sidewall. Applied Sciences. 2019; 9(17):3458. https://doi.org/10.3390/app9173458

Chicago/Turabian Style

Tan, Lijun, Quanbin Zhou, Wenlong Hu, Hong Wang, and Ruohe Yao. 2019. "Light Extraction Enhancement of InGaN Based Micro Light-Emitting Diodes with Concave-Convex Circular Composite Structure Sidewall" Applied Sciences 9, no. 17: 3458. https://doi.org/10.3390/app9173458

APA Style

Tan, L., Zhou, Q., Hu, W., Wang, H., & Yao, R. (2019). Light Extraction Enhancement of InGaN Based Micro Light-Emitting Diodes with Concave-Convex Circular Composite Structure Sidewall. Applied Sciences, 9(17), 3458. https://doi.org/10.3390/app9173458

Note that from the first issue of 2016, this journal uses article numbers instead of page numbers. See further details here.

Article Metrics

Back to TopTop