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Appl. Sci. 2018, 8(9), 1552;

Photonic Crystal Cavity with a Thin Low-Index Layer for Silicon-Compatible Nanolight Source

Department of Physics, Chung-Ang University, Seoul 06974, Korea
Author to whom correspondence should be addressed.
Received: 3 August 2018 / Revised: 29 August 2018 / Accepted: 31 August 2018 / Published: 4 September 2018
(This article belongs to the Special Issue Novel Advances in Optical Micro- and Nano-Cavities)
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The development of an efficient silicon-based nanolight source is an important step for silicon-based photonic integrated circuits. We propose a high quality factor photonic crystal nanocavity consisting of silicon and silica, which can be used as a silicon-compatible nanolight source. We show that this cavity can effectively confine lights in a low-index silica layer with a high confinement factor of 0.25, in which rare-earth dopants can be embedded as gain materials. The cavity is optimized to have a high quality factor of 15,000 and a mode volume of 0.01 μm3, while the resonance has a wavelength of 1537 nm. We expect that the high confinement factor in the thin silica layer and the high quality factor of the proposed cavity enable the cavity to be a good candidate for silicon-compatible nanolight sources for use in nanolasers or light-emitting diodes in the telecommunication wavelength region. View Full-Text
Keywords: photonic crystals; cavity; Purcell factor; slot mode photonic crystals; cavity; Purcell factor; slot mode

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Kim, Y.; Lee, Y.J.; Hong, S.; Moon, K.; Kwon, S.-H. Photonic Crystal Cavity with a Thin Low-Index Layer for Silicon-Compatible Nanolight Source. Appl. Sci. 2018, 8, 1552.

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