Next Article in Journal
The Effect of Interfacial Ge and RF-Bias on the Microstructure and Stress Evolution upon Annealing of Ag/AlN Multilayers
Next Article in Special Issue
Tuning the Resonant Frequency of a Surface Plasmon by Double-Metallic Ag/Au Nanoparticles for High-Efficiency Green Light-Emitting Diodes
Previous Article in Journal
Systematic Quantum Cluster Typical Medium Method for the Study of Localization in Strongly Disordered Electronic Systems
Previous Article in Special Issue
Effects of a Reduced Effective Active Region Volume on Wavelength-Dependent Efficiency Droop of InGaN-Based Light-Emitting Diodes
 
 

Order Article Reprints

Journal: Appl. Sci., 2018
Volume: 8
Number: 2402

Article: Influence of Quantum-Well Number and an AlN Electron Blocking Layer on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes
Authors: by Shuxin Tan, Jicai Zhang, Takashi Egawa and Gang Chen
Link: https://www.mdpi.com/2076-3417/8/12/2402

MDPI offers high quality article reprints with convenient shipping to destinations worldwide. Each reprint features a 270 gsm bright white cover and 105 gsm premium white paper, bound with two stitches for durability and printed in full color. The cover design is customized to your article and designed to be complimentary to the journal.

Order Cost and Details

Shipping Address

Billing Address

Notes or Comments

Validate and Place Order

The order must be prepaid after it is placed

req denotes required fields.
Back to TopTop