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High Performance MRAM with Spin-Transfer-Torque and Voltage-Controlled Magnetic Anisotropy Effects

National ASIC System Engineering Center, Southeast University, Nanjing 210096, China
Département Communications et Electronique, Télécom ParisTech, Université Paris-Saclay, 75013 Paris, France
Fert Beijing Institute, Beijing Advanced Innovation Center for Big Data and Brain Computing and School of Electronic and Information Engineering, Beihang Univeristy, Beijing 100191, China
Authors to whom correspondence should be addressed.
Appl. Sci. 2017, 7(9), 929;
Received: 14 August 2017 / Revised: 3 September 2017 / Accepted: 7 September 2017 / Published: 11 September 2017
The Internet of Things (IoTs) relies on efficient node memories to process data among sensors, cloud and RF front-end. Both mainstream and emerging memories have been developed to achieve this energy efficiency target. Spin transfer torque magnetic tunnel junction (STT-MTJ)-based nonvolatile memory (NVM) has demonstrated great performance in terms of zero standby power, switching power efficiency, infinite endurance and high density. However, it still has a big performance gap; e.g., high dynamic write energy, large latency, yield and reliability. Recently, voltage-controlled magnetic anisotropy (VCMA) has been introduced to achieve improved energy-delay efficiency and robust non-volatile writing control with an electric field or a switching voltage. VCMA-MTJ-based MRAM could be a promising candidate in IoT node memory for high-performance, ultra-low power consumption targets. View Full-Text
Keywords: STT-MRAM; VCMA-MRAM; ultra-low power; reliability STT-MRAM; VCMA-MRAM; ultra-low power; reliability
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Cai, H.; Kang, W.; Wang, Y.; Naviner, L.A.D.B.; Yang, J.; Zhao, W. High Performance MRAM with Spin-Transfer-Torque and Voltage-Controlled Magnetic Anisotropy Effects. Appl. Sci. 2017, 7, 929.

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