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Keywords = VCMA-MRAM

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10 pages, 691 KB  
Article
Bitwise Logical Operations in VCMA-MRAM
by Gulafshan Gulafshan, Selma Amara, Rajat Kumar, Danial Khan, Hossein Fariborzi and Yehia Massoud
Electronics 2022, 11(18), 2805; https://doi.org/10.3390/electronics11182805 - 6 Sep 2022
Cited by 7 | Viewed by 2668
Abstract
Today’s technology demands compact, portable, fast, and energy-efficient devices. One approach to making energy-efficient devices is an in-memory computation that addresses the memory bottleneck issues of the present computing system by utilizing a spintronic device viz. magnetic tunnel junction (MTJ). Further, area and [...] Read more.
Today’s technology demands compact, portable, fast, and energy-efficient devices. One approach to making energy-efficient devices is an in-memory computation that addresses the memory bottleneck issues of the present computing system by utilizing a spintronic device viz. magnetic tunnel junction (MTJ). Further, area and energy can be reduced through approximate computation. We present a circuit design based on the logic-in-memory computing paradigm on voltage-controlled magnetic anisotropy magnetoresistive random access memory (VCMA-MRAM). During the computation, multiple bit cells within the memory array are selected that are in parallel by activating multiple word lines. The designed circuit performs all logic operations-Read/NOT, AND/NAND, OR/NOR, and arithmetic SUM operation (1-bit approximate adder with 75% accuracy for SUM and accurate carry out) by slight modification using control signals. All the simulations have been performed at a 45 nm CMOS technology node with VCMA-MTJ compact model by using the HSPICE simulator. Simulation results show that the proposed circuit’s approximate adder consumes about 300% less energy and 2.3 times faster than its counterpart exact adder. Full article
(This article belongs to the Section Computer Science & Engineering)
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31 pages, 9481 KB  
Review
Recent Progress in the Voltage-Controlled Magnetic Anisotropy Effect and the Challenges Faced in Developing Voltage-Torque MRAM
by Takayuki Nozaki, Tatsuya Yamamoto, Shinji Miwa, Masahito Tsujikawa, Masafumi Shirai, Shinji Yuasa and Yoshishige Suzuki
Micromachines 2019, 10(5), 327; https://doi.org/10.3390/mi10050327 - 15 May 2019
Cited by 138 | Viewed by 11287
Abstract
The electron spin degree of freedom can provide the functionality of “nonvolatility” in electronic devices. For example, magnetoresistive random access memory (MRAM) is expected as an ideal nonvolatile working memory, with high speed response, high write endurance, and good compatibility with complementary metal-oxide-semiconductor [...] Read more.
The electron spin degree of freedom can provide the functionality of “nonvolatility” in electronic devices. For example, magnetoresistive random access memory (MRAM) is expected as an ideal nonvolatile working memory, with high speed response, high write endurance, and good compatibility with complementary metal-oxide-semiconductor (CMOS) technologies. However, a challenging technical issue is to reduce the operating power. With the present technology, an electrical current is required to control the direction and dynamics of the spin. This consumes high energy when compared with electric-field controlled devices, such as those that are used in the semiconductor industry. A novel approach to overcome this problem is to use the voltage-controlled magnetic anisotropy (VCMA) effect, which draws attention to the development of a new type of MRAM that is controlled by voltage (voltage-torque MRAM). This paper reviews recent progress in experimental demonstrations of the VCMA effect. First, we present an overview of the early experimental observations of the VCMA effect in all-solid state devices, and follow this with an introduction of the concept of the voltage-induced dynamic switching technique. Subsequently, we describe recent progress in understanding of physical origin of the VCMA effect. Finally, new materials research to realize a highly-efficient VCMA effect and the verification of reliable voltage-induced dynamic switching with a low write error rate are introduced, followed by a discussion of the technical challenges that will be encountered in the future development of voltage-torque MRAM. Full article
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13 pages, 4164 KB  
Review
High Performance MRAM with Spin-Transfer-Torque and Voltage-Controlled Magnetic Anisotropy Effects
by Hao Cai, Wang Kang, You Wang, Lirida Alves De Barros Naviner, Jun Yang and Weisheng Zhao
Appl. Sci. 2017, 7(9), 929; https://doi.org/10.3390/app7090929 - 11 Sep 2017
Cited by 47 | Viewed by 10648
Abstract
The Internet of Things (IoTs) relies on efficient node memories to process data among sensors, cloud and RF front-end. Both mainstream and emerging memories have been developed to achieve this energy efficiency target. Spin transfer torque magnetic tunnel junction (STT-MTJ)-based nonvolatile memory (NVM) [...] Read more.
The Internet of Things (IoTs) relies on efficient node memories to process data among sensors, cloud and RF front-end. Both mainstream and emerging memories have been developed to achieve this energy efficiency target. Spin transfer torque magnetic tunnel junction (STT-MTJ)-based nonvolatile memory (NVM) has demonstrated great performance in terms of zero standby power, switching power efficiency, infinite endurance and high density. However, it still has a big performance gap; e.g., high dynamic write energy, large latency, yield and reliability. Recently, voltage-controlled magnetic anisotropy (VCMA) has been introduced to achieve improved energy-delay efficiency and robust non-volatile writing control with an electric field or a switching voltage. VCMA-MTJ-based MRAM could be a promising candidate in IoT node memory for high-performance, ultra-low power consumption targets. Full article
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