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Appl. Sci. 2017, 7(12), 1289;

A Three-Axis Magnetic Field Microsensor Fabricated Utilizing a CMOS Process

Department of Mechanical Engineering, National Chung Hsing University, Taichung 402, Taiwan
Department of Civil and Environmental Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan
Department of Electro-Optical Engineering, Yuan Ze University, Taoyuan 320, Taiwan
Author to whom correspondence should be addressed.
Received: 17 October 2017 / Revised: 7 December 2017 / Accepted: 7 December 2017 / Published: 11 December 2017
PDF [4005 KB, uploaded 12 December 2017]


This study develops a three-axis magnetic field (MF) microsensor manufactured by a complementary metal oxide semiconductor (CMOS) process. The MF microsensor contains a ring emitter, four bases, and eight collectors. Sentaurus TCAD was used to simulate the microsensor characterization. The STI (shallow trench isolation) oxide in the process was used to limit the current direction and reduce leakage current. The microsensor produces a voltage difference once it senses a magnetic field. An amplifier circuitry magnifies voltage difference into a voltage output. Experiments reveals that the MF microsensor has a sensitivity of 1.45 V/T along the x-axis and a sensitivity of 1.37 V/T along the y-axis. View Full-Text
Keywords: magnetic field sensor; magnetotransistor; CMOS process; MEMS magnetic field sensor; magnetotransistor; CMOS process; MEMS

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Tseng, J.-Z.; Shih, P.-J.; Hsu, C.-C.; Dai, C.-L. A Three-Axis Magnetic Field Microsensor Fabricated Utilizing a CMOS Process. Appl. Sci. 2017, 7, 1289.

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