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Appl. Sci. 2017, 7(11), 1116;

Multi-Layer Metallization Structure Development for Highly Efficient Polycrystalline SnSe Thermoelectric Devices

School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Korea
Advanced Materials and Devices Laboratory, Korea Institute of Energy Research, 152 Gajung-ro, Yuseong-gu, Daejeon 305-343, Korea
Author to whom correspondence should be addressed.
Received: 19 September 2017 / Revised: 13 October 2017 / Accepted: 23 October 2017 / Published: 28 October 2017
PDF [3391 KB, uploaded 30 October 2017]


Recently, SnSe material with an outstanding high ZT (Figure of merit) of 2.6 has attracted much attention due to its strong applicability for highly efficient thermoelectric devices. Many studies following the first journal publication have been focused on SnSe materials, not on thermoelectric devices. Particularly, to realize highly efficient intermediate-temperature (600~1000 K) thermoelectric modules with this promising thermoelectric material, a more thermally and electrically reliable interface bonding technology needs to be developed so that the modules can stably perform their power generation in this temperature range. In this work, we demonstrate several approaches to develop metallization layers on SnSe thermoelectric legs. The single-layer metallization shows limitations in their electrical contact resistances and elemental diffusions. The Ag/Co/Ti multi-layer metallization results in lowering their electrical contact resistances, in addition to providing more robust interfaces. Moreover, it is found to maintain the interfacial characteristics without any significant degradation, even after heat treatment at 723 K for 20 h. These results can be effectively applied in the fabrication of thermoelectric devices or modules that are made of the SnSe thermoelectric materials. View Full-Text
Keywords: tin selenide; thermoelectric module; contact resistance; metallization tin selenide; thermoelectric module; contact resistance; metallization

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Kim, Y.; Yoon, G.; Cho, B.J.; Park, S.H. Multi-Layer Metallization Structure Development for Highly Efficient Polycrystalline SnSe Thermoelectric Devices. Appl. Sci. 2017, 7, 1116.

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