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Applied Sciences
Volume 15
Issue 11
10.3390/app15115926
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This is an early access version, the complete PDF, HTML, and XML versions will be available soon.
Article

Radiofrequency Performance Analysis of Metal-Insulator-Graphene Diodes

by
Leslie Paulina Cruz-Rodríguez
1,
Mari Carmen Pardo
2,
Anibal Pacheco-Sanchez
2,
Eloy Ramírez-García
1,
Francisco G. Ruiz
2 and
Francisco Pasadas
2,*
1
Departamento de Telecomunicaciones, ESIME Zacatenco, Instituto Politécnico Nacional, Unidad Profesional Adolfo López Mateos, Avenida Instituto Politécnico Nacional s/n, UPALM, Edif. Z-4 3er Piso, Mexico City 07738, Mexico
2
Pervasive Electronics Advanced Research Laboratory (PEARL), Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, 18071 Granada, Spain
*
Author to whom correspondence should be addressed.
Appl. Sci. 2025, 15(11), 5926; https://doi.org/10.3390/app15115926 (registering DOI)
Submission received: 31 March 2025 / Revised: 14 May 2025 / Accepted: 21 May 2025 / Published: 24 May 2025
(This article belongs to the Special Issue Nanoscale Electronic Devices: Modeling and Applications)
Versions Notes

Abstract

This work presents the performance projection of a metal-insulator-graphene diode as the building block of a radiofrequency power detector, highlighting its rectifying figures of merit. The analysis was performed by means of a computer-aided design tool validated with experimental measurements of fabricated devices. Transient simulations were used to accurately determine the detector output voltage, while particular consideration was given to suitable convergence of the non-linear circuit response. The diode was analyzed in both ideal and non-ideal cases, with the latter accounting for its parasitic effects. In the non-ideal case, the diode exhibited a tangential responsivity of 26.9 V/W at 2.45 GHz and 31.9 V/W at 1.225 GHz. However, when parasitic elements were neglected in the ideal case, the responsivity significantly increased to 47.3 V/W at 2.45 GHz and 38.7 V/W at 1.225 GHz. Additionally, the diode demonstrated a non-linearity of 6.64 at 0.7 V and an asymmetry of 806.6 in a bias window of ±1 V, which resulted in a competitive value compared to other state-of-the-art rectifying technologies. Tangential responsivities (βv) of graphene diodes at less-studied frequencies in the gigahertz band are presented, showing a high βv value of 63.7 V/W at 1 GHz.
Keywords: graphene; diode; radiofrequency; power detection; MIG graphene; diode; radiofrequency; power detection; MIG

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MDPI and ACS Style

Cruz-Rodríguez, L.P.; Pardo, M.C.; Pacheco-Sanchez, A.; Ramírez-García, E.; Ruiz, F.G.; Pasadas, F. Radiofrequency Performance Analysis of Metal-Insulator-Graphene Diodes. Appl. Sci. 2025, 15, 5926. https://doi.org/10.3390/app15115926

AMA Style

Cruz-Rodríguez LP, Pardo MC, Pacheco-Sanchez A, Ramírez-García E, Ruiz FG, Pasadas F. Radiofrequency Performance Analysis of Metal-Insulator-Graphene Diodes. Applied Sciences. 2025; 15(11):5926. https://doi.org/10.3390/app15115926

Chicago/Turabian Style

Cruz-Rodríguez, Leslie Paulina, Mari Carmen Pardo, Anibal Pacheco-Sanchez, Eloy Ramírez-García, Francisco G. Ruiz, and Francisco Pasadas. 2025. "Radiofrequency Performance Analysis of Metal-Insulator-Graphene Diodes" Applied Sciences 15, no. 11: 5926. https://doi.org/10.3390/app15115926

APA Style

Cruz-Rodríguez, L. P., Pardo, M. C., Pacheco-Sanchez, A., Ramírez-García, E., Ruiz, F. G., & Pasadas, F. (2025). Radiofrequency Performance Analysis of Metal-Insulator-Graphene Diodes. Applied Sciences, 15(11), 5926. https://doi.org/10.3390/app15115926

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