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Applied Sciences
Volume 13
Issue 6
10.3390/app13063388
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Communication

Analysis of Channel Potential Recovery According to the Back Pattern in 3D NAND Flash Memory

by
Gyunseok Ryu
,
Hyunju Kim
,
Jihwan Lee
and
Myounggon Kang
*
Department of Electronics Engineering, Korea National University of Transportation, Room No. 326, Smart ICT Building, 50 Daehak-ro, Chungju-si 27469, Republic of Korea
*
Author to whom correspondence should be addressed.
Appl. Sci. 2023, 13(6), 3388; https://doi.org/10.3390/app13063388
Submission received: 27 January 2023 / Revised: 21 February 2023 / Accepted: 23 February 2023 / Published: 7 March 2023
(This article belongs to the Section Materials Science and Engineering)
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Abstract

This study analyzed the recovery of channel potential according to the program states of adjacent cells. When the verify operation ended, and all voltages dropped to 0 V and the decreased potential of the floating channel caused by the down-coupling phenomenon was recovered continuously over time, regardless of the program states of adjacent WLs. The extent of channel potential recovery showed a similar tendency to that of the variation in the electron concentration of the floating channel. The electron–hole pair recombination decreased the electron concentration, resulting in channel potential recovery. When the adjacent WLs were programmed in a low state, additional electron–hole pair recombination and hole diffusion occurred in the floating channel. Therefore, the channel potential recovered quickly when the adjacent WLs programmed in a low state compared to when they programmed in a high state.
Keywords: 3D NAND flash memory; channel potential; down-coupling phenomenon (DCP); electron-hole pair recombination; carrier diffusion; TCAD 3D NAND flash memory; channel potential; down-coupling phenomenon (DCP); electron-hole pair recombination; carrier diffusion; TCAD

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MDPI and ACS Style

Ryu, G.; Kim, H.; Lee, J.; Kang, M. Analysis of Channel Potential Recovery According to the Back Pattern in 3D NAND Flash Memory. Appl. Sci. 2023, 13, 3388. https://doi.org/10.3390/app13063388

AMA Style

Ryu G, Kim H, Lee J, Kang M. Analysis of Channel Potential Recovery According to the Back Pattern in 3D NAND Flash Memory. Applied Sciences. 2023; 13(6):3388. https://doi.org/10.3390/app13063388

Chicago/Turabian Style

Ryu, Gyunseok, Hyunju Kim, Jihwan Lee, and Myounggon Kang. 2023. "Analysis of Channel Potential Recovery According to the Back Pattern in 3D NAND Flash Memory" Applied Sciences 13, no. 6: 3388. https://doi.org/10.3390/app13063388

APA Style

Ryu, G., Kim, H., Lee, J., & Kang, M. (2023). Analysis of Channel Potential Recovery According to the Back Pattern in 3D NAND Flash Memory. Applied Sciences, 13(6), 3388. https://doi.org/10.3390/app13063388

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