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Applied Sciences
Volume 11
Issue 22
10.3390/app112210872
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Article

Fenton Reaction for Enhancing Polishing Rate and Protonated Amine Functional Group Polymer for Inhibiting Corrosion in Ge1Sb4Te5 Film Surface Chemical-Mechanical-Planarization

by
Gi-Ppeum Jeong
1,
Young-Hye Son
2,
Jun-Seong Park
1,
Pil-Su Kim
2,
Man-Hyup Han
2,
Seong-Wan Hong
2,
Jin-Hyung Park
3,
Hao Cui
4,
Bo-Un Yoon
4 and
Jea-Gun Park
1,2,*
1
Department of Electrornic Engineering, Hanyang University, Seoul 04763, Korea
2
Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 04763, Korea
3
UB Materials Inc., Yongin 17162, Korea
4
Flash Process Development Team, Semiconductor R&D Center, Samsung Electronics, Samsungjeonja-ro, Hwaseong 18448, Korea
*
Author to whom correspondence should be addressed.
Appl. Sci. 2021, 11(22), 10872; https://doi.org/10.3390/app112210872
Submission received: 28 October 2021 / Revised: 13 November 2021 / Accepted: 16 November 2021 / Published: 17 November 2021
(This article belongs to the Special Issue Recent Advances in CMP Slurries and Post-CMP Cleaning)
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Abstract

A Fenton reaction and a corrosion inhibition strategy were designed for enhancing the polishing rate and achieving a corrosion-free Ge1Sb4Te5 film surface during chemical-mechanical planarization (CMP) of three-dimensional (3D) cross-point phase-change random-access memory (PCRAM) cells and 3D cross-point synaptic arrays. The Fenton reaction was conducted with 1,3-propylenediamine tetraacetic acid, ferric ammonium salt (PDTA–Fe) and H2O2. The chemical oxidation degree of GeO2, Sb2O3, and TeO2 evidently increased with the PDTA–Fe concentration in the CMP slurry, such that the polishing rate of the Ge1Sb4Te5 film surface linearly increased with the PDTA–Fe concentration. The addition of a corrosion inhibitor having protonated amine functional groups in the CMP slurry remarkably suppressed the corrosion degree of the Ge1Sb4Te5 film surface after CMP; i.e., the corrosion current of the Ge1Sb4Te5 film surface linearly decreased as the corrosion inhibitor concentration increased. Thus, the proposed Fenton reaction and corrosion inhibitor in the Ge1Sb4Te5 film surface CMP slurry could achieve an almost recess-free Ge1Sb4Te5 film surface of the confined-PCRAM cells, having an aspect ratio of 60-nm-height to 4-nm-diameter after CMP.
Keywords: chemical-mechanical planarization; phase-change random-access memory; Fenton reaction; ferric–ionic catalyst; corrosion inhibitor; chalcogenide chemical-mechanical planarization; phase-change random-access memory; Fenton reaction; ferric–ionic catalyst; corrosion inhibitor; chalcogenide

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MDPI and ACS Style

Jeong, G.-P.; Son, Y.-H.; Park, J.-S.; Kim, P.-S.; Han, M.-H.; Hong, S.-W.; Park, J.-H.; Cui, H.; Yoon, B.-U.; Park, J.-G. Fenton Reaction for Enhancing Polishing Rate and Protonated Amine Functional Group Polymer for Inhibiting Corrosion in Ge1Sb4Te5 Film Surface Chemical-Mechanical-Planarization. Appl. Sci. 2021, 11, 10872. https://doi.org/10.3390/app112210872

AMA Style

Jeong G-P, Son Y-H, Park J-S, Kim P-S, Han M-H, Hong S-W, Park J-H, Cui H, Yoon B-U, Park J-G. Fenton Reaction for Enhancing Polishing Rate and Protonated Amine Functional Group Polymer for Inhibiting Corrosion in Ge1Sb4Te5 Film Surface Chemical-Mechanical-Planarization. Applied Sciences. 2021; 11(22):10872. https://doi.org/10.3390/app112210872

Chicago/Turabian Style

Jeong, Gi-Ppeum, Young-Hye Son, Jun-Seong Park, Pil-Su Kim, Man-Hyup Han, Seong-Wan Hong, Jin-Hyung Park, Hao Cui, Bo-Un Yoon, and Jea-Gun Park. 2021. "Fenton Reaction for Enhancing Polishing Rate and Protonated Amine Functional Group Polymer for Inhibiting Corrosion in Ge1Sb4Te5 Film Surface Chemical-Mechanical-Planarization" Applied Sciences 11, no. 22: 10872. https://doi.org/10.3390/app112210872

APA Style

Jeong, G.-P., Son, Y.-H., Park, J.-S., Kim, P.-S., Han, M.-H., Hong, S.-W., Park, J.-H., Cui, H., Yoon, B.-U., & Park, J.-G. (2021). Fenton Reaction for Enhancing Polishing Rate and Protonated Amine Functional Group Polymer for Inhibiting Corrosion in Ge1Sb4Te5 Film Surface Chemical-Mechanical-Planarization. Applied Sciences, 11(22), 10872. https://doi.org/10.3390/app112210872

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