Lazarev, S.; Kim, Y.Y.; Gelisio, L.; Bi, Z.; Nowzari, A.; Zaluzhnyy, I.A.; Khubbutdinov, R.; Dzhigaev, D.; Jeromin, A.; Keller, T.F.;
et al. Influence of Contacts and Applied Voltage on a Structure of a Single GaN Nanowire. Appl. Sci. 2021, 11, 9419.
https://doi.org/10.3390/app11209419
AMA Style
Lazarev S, Kim YY, Gelisio L, Bi Z, Nowzari A, Zaluzhnyy IA, Khubbutdinov R, Dzhigaev D, Jeromin A, Keller TF,
et al. Influence of Contacts and Applied Voltage on a Structure of a Single GaN Nanowire. Applied Sciences. 2021; 11(20):9419.
https://doi.org/10.3390/app11209419
Chicago/Turabian Style
Lazarev, Sergey, Young Yong Kim, Luca Gelisio, Zhaoxia Bi, Ali Nowzari, Ivan A. Zaluzhnyy, Ruslan Khubbutdinov, Dmitry Dzhigaev, Arno Jeromin, Thomas F. Keller,
and et al. 2021. "Influence of Contacts and Applied Voltage on a Structure of a Single GaN Nanowire" Applied Sciences 11, no. 20: 9419.
https://doi.org/10.3390/app11209419
APA Style
Lazarev, S., Kim, Y. Y., Gelisio, L., Bi, Z., Nowzari, A., Zaluzhnyy, I. A., Khubbutdinov, R., Dzhigaev, D., Jeromin, A., Keller, T. F., Sprung, M., Mikkelsen, A., Samuelson, L., & Vartanyants, I. A.
(2021). Influence of Contacts and Applied Voltage on a Structure of a Single GaN Nanowire. Applied Sciences, 11(20), 9419.
https://doi.org/10.3390/app11209419