Ka-Band Stacked Power Amplifier Supporting 3GPP New Radio FR2 Band n258 Implemented Using 45 nm CMOS SOI

Aikio, Janne P.; Sethi, Alok; Hietanen, Mikko; Rusanen, Jere; Rahkonen, Timo; Pärssinen, Aarno

doi:10.3390/app11156708

Open AccessFeature PaperArticle

Ka-Band Stacked Power Amplifier Supporting 3GPP New Radio FR2 Band n258 Implemented Using 45 nm CMOS SOI

by

Janne P. Aikio

^*

,

Alok Sethi

,

Mikko Hietanen

,

Jere Rusanen

,

Timo Rahkonen

and

Aarno Pärssinen

Faculty of Information Technology and Electrical Engineering, University of Oulu, P.O. Box 4500, FI-90014 Oulu, Finland

^*

Author to whom correspondence should be addressed.

Appl. Sci. 2021, 11(15), 6708; https://doi.org/10.3390/app11156708

Submission received: 10 June 2021 / Revised: 16 July 2021 / Accepted: 19 July 2021 / Published: 22 July 2021

(This article belongs to the Special Issue Radio-Frequency High Power Amplifier)

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Abstract

This paper presents a fully integrated, four-stack, single-ended, single stage power amplifier (PA) for millimeter-wave (mmWave) wireless applications that was fabricated and designed using 45 nm complementary metal oxide semiconductor silicon on insulator (CMOS SOI) technology. The frequency of operation is from 20 GHz to 30 GHz, with

13.7

dB of maximum gain. The maximum RF (radio frequency) output power (Pout), power-added efficiency (PAE) and output 1 dB compression point are

20.5

dBm, 29% and

18.8

dBm, respectively, achieved at 24 GHz. The error vector magnitude (EVM) of

12.5

% was measured at an average channel power of

14.5

dBm at the center of the the 3GPP/NR (third generation partnership project/new radio) FR2 band n258—i.e., 26 GHz—using a 100 MHz 16-quadrature amplitude modulation (QAM) 3GPP/NR orthogonal frequency division modulation (OFDM) signal.

Keywords: power amplifier; stacked power amplifier; CMOS SOI; mmWave; 3GPP; NR

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MDPI and ACS Style

Aikio, J.P.; Sethi, A.; Hietanen, M.; Rusanen, J.; Rahkonen, T.; Pärssinen, A. Ka-Band Stacked Power Amplifier Supporting 3GPP New Radio FR2 Band n258 Implemented Using 45 nm CMOS SOI. Appl. Sci. 2021, 11, 6708. https://doi.org/10.3390/app11156708

AMA Style

Aikio JP, Sethi A, Hietanen M, Rusanen J, Rahkonen T, Pärssinen A. Ka-Band Stacked Power Amplifier Supporting 3GPP New Radio FR2 Band n258 Implemented Using 45 nm CMOS SOI. Applied Sciences. 2021; 11(15):6708. https://doi.org/10.3390/app11156708

Chicago/Turabian Style

Aikio, Janne P., Alok Sethi, Mikko Hietanen, Jere Rusanen, Timo Rahkonen, and Aarno Pärssinen. 2021. "Ka-Band Stacked Power Amplifier Supporting 3GPP New Radio FR2 Band n258 Implemented Using 45 nm CMOS SOI" Applied Sciences 11, no. 15: 6708. https://doi.org/10.3390/app11156708

APA Style

Aikio, J. P., Sethi, A., Hietanen, M., Rusanen, J., Rahkonen, T., & Pärssinen, A. (2021). Ka-Band Stacked Power Amplifier Supporting 3GPP New Radio FR2 Band n258 Implemented Using 45 nm CMOS SOI. Applied Sciences, 11(15), 6708. https://doi.org/10.3390/app11156708

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Ka-Band Stacked Power Amplifier Supporting 3GPP New Radio FR2 Band n258 Implemented Using 45 nm CMOS SOI

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