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Applied Sciences
Volume 10
Issue 6
10.3390/app10062183
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Communication

A Broadband Active Microwave Monolithically Integrated Circuit Balun in Graphene Technology

by
Dalal Fadil
1,
Vikram Passi
2,
Wei Wei
1,
Soukaina Ben Salk
1,
Di Zhou
1,
Wlodek Strupinski
3,
Max C. Lemme
2,4,
Thomas Zimmer
5,
Emiliano Pallecchi
1,
Henri Happy
1 and
Sebastien Fregonese
5,*
1
University of Lille—IEMN CNRS UMR8520, Avenue Poincaré, CS 60069, 59652 Villeneuve d’Ascq, France
2
AMO GmbH, Advanced Microelectronic Center Aachen (AMICA), Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
3
Warsaw University of Technology, Koszykowa 75, str., 00-662 Warsaw, Poland
4
Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 2, 52074 Aachen, Germany
5
IMS Laboratory, CNRS UMR 5218, Université Bordeaux 1, 33400 Talence, France
*
Author to whom correspondence should be addressed.
Appl. Sci. 2020, 10(6), 2183; https://doi.org/10.3390/app10062183
Received: 4 December 2019 / Revised: 5 February 2020 / Accepted: 25 February 2020 / Published: 23 March 2020
(This article belongs to the Special Issue Graphene and Graphene-Based Composites for Electronics)
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Abstract

This paper presents the first graphene radiofrequency (RF) monolithic integrated balun circuit. It is composed of four integrated graphene field effect transistors (GFETs). This innovative active balun concept takes advantage of the GFET ambipolar behavior. It is realized using an advanced silicon carbide (SiC) based bilayer graphene FET technology having RF performances of about 20 GHz. Balun circuit measurement demonstrates its high frequency capability. An upper limit of 6 GHz has been achieved when considering a phase difference lower than 10° and a magnitude of amplitude imbalance less than 0.5 dB. Hence, this circuit topology shows excellent performance with large broadband performance and a functionality of up to one-third of the transit frequency of the transistor. View Full-Text
Keywords: graphene; microwave; MMIC; integrated circuits; active balun; 2D materials graphene; microwave; MMIC; integrated circuits; active balun; 2D materials
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MDPI and ACS Style

Fadil, D.; Passi, V.; Wei, W.; Ben Salk, S.; Zhou, D.; Strupinski, W.; Lemme, M.C.; Zimmer, T.; Pallecchi, E.; Happy, H.; Fregonese, S. A Broadband Active Microwave Monolithically Integrated Circuit Balun in Graphene Technology. Appl. Sci. 2020, 10, 2183. https://doi.org/10.3390/app10062183

AMA Style

Fadil D, Passi V, Wei W, Ben Salk S, Zhou D, Strupinski W, Lemme MC, Zimmer T, Pallecchi E, Happy H, Fregonese S. A Broadband Active Microwave Monolithically Integrated Circuit Balun in Graphene Technology. Applied Sciences. 2020; 10(6):2183. https://doi.org/10.3390/app10062183

Chicago/Turabian Style

Fadil, Dalal, Vikram Passi, Wei Wei, Soukaina Ben Salk, Di Zhou, Wlodek Strupinski, Max C. Lemme, Thomas Zimmer, Emiliano Pallecchi, Henri Happy, and Sebastien Fregonese. 2020. "A Broadband Active Microwave Monolithically Integrated Circuit Balun in Graphene Technology" Applied Sciences 10, no. 6: 2183. https://doi.org/10.3390/app10062183

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