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Journal: Metals, 2021
Volume: 11
Number: 772

Article: Improved Synaptic Device Properties of HfAlOx Dielectric on Highly Doped Silicon Substrate by Partial Reset Process
Authors: by Seunghyun Kim, Osung Kwon, Hojeong Ryu and Sungjun Kim
Link: https://www.mdpi.com/2075-4701/11/5/772

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