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Volume 13
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10.3390/machines13080689
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Article

Real-Time Temperature Estimation of the Machine Drive SiC Modules Consisting of Parallel Chips per Switch for Reliability Modelling and Lifetime Prediction

by
Tamer Kamel
*,
Olamide Olagunju
and
Temitope Johnson
School of Engineering, Computing and Mathematics, The University of Plymouth, Plymouth PL4 8AA, UK
*
Author to whom correspondence should be addressed.
Machines 2025, 13(8), 689; https://doi.org/10.3390/machines13080689
Submission received: 13 June 2025 / Revised: 22 July 2025 / Accepted: 28 July 2025 / Published: 5 August 2025
(This article belongs to the Special Issue Power Converters: Topology, Control, Reliability, and Applications)
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Abstract

This paper presents a new methodical procedure to monitor in real time the junction temperature of SiC Power MOSFET modules of parallel-connected chips utilized in machine drive systems to develop their reliability modelling and predict their lifetime. The paper implements the on-line measurements of temperature-sensitive electrical parameters (TSEP) approach, particularly the quasi-threshold voltage and the on-state drain to source voltage, to estimate the junction temperature in real time. The proposed procedure firstly applied computational fluid dynamics analysis on the module under study to determine the chip which undergoes the maximum junction temperature during typical operation of the module. Then, a calibration phase, using double-pulse tests on the selected chip, is used to generate look-up tables to relate the TSEPs under study to the junction temperature. Next, the real-time estimation of junction temperature was accomplished during the on-line operation of the three-phase inverter, taking into account the induced distortion/noises due to operation of the parallel-connected chips in the module. After that, a comparison between the two TSEPs under study was provided to demonstrate their advantages/drawbacks. Finally, reliability modelling was developed to predict the lifetime of the studied module based on the estimated junction temperature under a predetermined mission profile.
Keywords: junction temperature; SiC power MOSFET; temperature sensitive electrical parameters; reliability modelling; lifetime prediction junction temperature; SiC power MOSFET; temperature sensitive electrical parameters; reliability modelling; lifetime prediction

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MDPI and ACS Style

Kamel, T.; Olagunju, O.; Johnson, T. Real-Time Temperature Estimation of the Machine Drive SiC Modules Consisting of Parallel Chips per Switch for Reliability Modelling and Lifetime Prediction. Machines 2025, 13, 689. https://doi.org/10.3390/machines13080689

AMA Style

Kamel T, Olagunju O, Johnson T. Real-Time Temperature Estimation of the Machine Drive SiC Modules Consisting of Parallel Chips per Switch for Reliability Modelling and Lifetime Prediction. Machines. 2025; 13(8):689. https://doi.org/10.3390/machines13080689

Chicago/Turabian Style

Kamel, Tamer, Olamide Olagunju, and Temitope Johnson. 2025. "Real-Time Temperature Estimation of the Machine Drive SiC Modules Consisting of Parallel Chips per Switch for Reliability Modelling and Lifetime Prediction" Machines 13, no. 8: 689. https://doi.org/10.3390/machines13080689

APA Style

Kamel, T., Olagunju, O., & Johnson, T. (2025). Real-Time Temperature Estimation of the Machine Drive SiC Modules Consisting of Parallel Chips per Switch for Reliability Modelling and Lifetime Prediction. Machines, 13(8), 689. https://doi.org/10.3390/machines13080689

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