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Open AccessArticle

Metal–Insulator Transition in Three-Dimensional Semiconductors

Institut für Physik, Universität Augsburg, D-86135 Augsburg, Germany
Symmetry 2019, 11(11), 1345; https://doi.org/10.3390/sym11111345
Received: 28 September 2019 / Revised: 21 October 2019 / Accepted: 24 October 2019 / Published: 1 November 2019
(This article belongs to the Special Issue Symmetry and Mesoscopic Physics)
We use a random gap model to describe a metal–insulator transition in three-dimensional semiconductors due to doping, and find a conventional phase transition, where the effective scattering rate is the order parameter. Spontaneous symmetry breaking results in metallic behavior, whereas the insulating regime is characterized by the absence of spontaneous symmetry breaking. The transition is continuous for the average conductivity with critical exponent equal to 1. Away from the critical point, the exponent is roughly 0.6, which may explain experimental observations of a crossover of the exponent from 1 to 0.5 by going away from the critical point. View Full-Text
Keywords: particle-hole symmetry; metal–insulator transition; random gap model particle-hole symmetry; metal–insulator transition; random gap model
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Ziegler, K. Metal–Insulator Transition in Three-Dimensional Semiconductors. Symmetry 2019, 11, 1345.

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