Tungsten-Doped Zinc Oxide and Indium–Zinc Oxide Films as High-Performance Electron-Transport Layers in N–I–P Perovskite Solar Cells

Kang, Ju Hwan; Song, Aeran; Park, Yu Jung; Seo, Jung Hwa; Walker, Bright; Chung, Kwun-Bum

doi:10.3390/polym12040737

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Tungsten-Doped Zinc Oxide and Indium–Zinc Oxide Films as High-Performance Electron-Transport Layers in N–I–P Perovskite Solar Cells

by

Ju Hwan Kang

¹

,

Aeran Song

²,

Yu Jung Park

¹,

Jung Hwa Seo

^1,*,

Bright Walker

^3,* and

Kwun-Bum Chung

^2,*

¹

Department of Materials Physics, Dong-A University, Busan 49315, Korea

²

Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Korea

³

Department of Chemistry, Kyung Hee University, Seoul 02447, Korea

^*

Authors to whom correspondence should be addressed.

Polymers 2020, 12(4), 737; https://doi.org/10.3390/polym12040737

Submission received: 18 February 2020 / Revised: 23 March 2020 / Accepted: 24 March 2020 / Published: 26 March 2020

(This article belongs to the Special Issue Conjugated Oligomers and Polymer Nanomaterials)

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Abstract

Perovskite solar cells (PSCs) have attracted tremendous research attention due to their potential as a next-generation photovoltaic cell. Transition metal oxides in N–I–P structures have been widely used as electron-transporting materials but the need for a high-temperature sintering step is incompatible with flexible substrate materials and perovskite materials which cannot withstand elevated temperatures. In this work, novel metal oxides prepared by sputtering deposition were investigated as electron-transport layers in planar PSCs with the N–I–P structure. The incorporation of tungsten in the oxide layer led to a power conversion efficiency (PCE) increase from 8.23% to 16.05% due to the enhanced electron transfer and reduced back-recombination. Scanning electron microscope (SEM) images reveal that relatively large grain sizes in the perovskite phase with small grain boundaries were formed when the perovskite was deposited on tungsten-doped films. This study demonstrates that novel metal oxides can be used as in perovskite devices as electron transfer layers to improve the efficiency.

Keywords: transparent metal oxide; perovskite solar cell; tungsten-doped InZnO; zinc–oxynitride

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MDPI and ACS Style

Kang, J.H.; Song, A.; Park, Y.J.; Seo, J.H.; Walker, B.; Chung, K.-B. Tungsten-Doped Zinc Oxide and Indium–Zinc Oxide Films as High-Performance Electron-Transport Layers in N–I–P Perovskite Solar Cells. Polymers 2020, 12, 737. https://doi.org/10.3390/polym12040737

AMA Style

Kang JH, Song A, Park YJ, Seo JH, Walker B, Chung K-B. Tungsten-Doped Zinc Oxide and Indium–Zinc Oxide Films as High-Performance Electron-Transport Layers in N–I–P Perovskite Solar Cells. Polymers. 2020; 12(4):737. https://doi.org/10.3390/polym12040737

Chicago/Turabian Style

Kang, Ju Hwan, Aeran Song, Yu Jung Park, Jung Hwa Seo, Bright Walker, and Kwun-Bum Chung. 2020. "Tungsten-Doped Zinc Oxide and Indium–Zinc Oxide Films as High-Performance Electron-Transport Layers in N–I–P Perovskite Solar Cells" Polymers 12, no. 4: 737. https://doi.org/10.3390/polym12040737

APA Style

Kang, J. H., Song, A., Park, Y. J., Seo, J. H., Walker, B., & Chung, K.-B. (2020). Tungsten-Doped Zinc Oxide and Indium–Zinc Oxide Films as High-Performance Electron-Transport Layers in N–I–P Perovskite Solar Cells. Polymers, 12(4), 737. https://doi.org/10.3390/polym12040737

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Tungsten-Doped Zinc Oxide and Indium–Zinc Oxide Films as High-Performance Electron-Transport Layers in N–I–P Perovskite Solar Cells

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