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Passivation Effect on ZnO Films by SF6 Plasma Treatment

State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
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Crystals 2019, 9(5), 236; https://doi.org/10.3390/cryst9050236
Received: 11 April 2019 / Revised: 30 April 2019 / Accepted: 2 May 2019 / Published: 5 May 2019
(This article belongs to the Special Issue Zinc Oxide Nanomaterials and Based Devices)
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Abstract

The passivation effects of SF6 plasma on zinc oxide (ZnO) films prepared by magnetron sputtering were researched. After the SF6 plasma passivation of ZnO films, the grain size increases, there is low surface roughness, and a small amount of Zn-F bonds are formed, resulting in the narrowing of band gap. The photoluminescence (PL) intensity of SF6-passivated ZnO films has a 120% increase compared to the untreated samples, and the reduction in defects can increase the resistivity and stability of ZnO films. ZnO films are used in the preparation of ZnO/p-Si heterojunction diodes. The results of the measurement of current voltage (J–V) show that the reverse current is reduced after SF6 plasma passivation, indicating an improvement in the electrical properties of ZnO films. View Full-Text
Keywords: ZnO; SF6; passivation ZnO; SF6; passivation
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Xu, Y.; Bo, B.; Gao, X.; Qiao, Z. Passivation Effect on ZnO Films by SF6 Plasma Treatment. Crystals 2019, 9, 236.

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