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Resonance Raman Spectroscopy of Mn-Mgk Cation Complexes in GaN

1
V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine, 41 Nauky pr., 03028 Kyiv, Ukraine
2
Institut für Halbleiter-und-Festkörperphysik, Johannes Kepler University, Altenbergerstr. 69, A-4040 Linz, Austria
*
Author to whom correspondence should be addressed.
Crystals 2019, 9(5), 235; https://doi.org/10.3390/cryst9050235
Received: 15 April 2019 / Revised: 1 May 2019 / Accepted: 2 May 2019 / Published: 4 May 2019
(This article belongs to the Special Issue Raman Spectroscopy of Crystals)
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Abstract

Resonance Raman analysis is performed in order to gain insight into the nature of impurity-induced Raman features in GaN:(Mn,Mg) hosting Mn-Mgk cation complexes and representing a prospective strategic material for the realization of full-nitride photonic devices emitting in the infra-red. It is found that in contrast to the case of GaN:Mn, the resonance enhancement of Mn-induced modes at sub-band excitation in Mg co-doped samples is not observed at an excitation of 2.4 eV, but shifts to lower energies, an effect explained by a resonance process involving photoionization of a hole from the donor level of Mn to the valence band of GaN. Selective excitation within the resonance Raman conditions allows the structure of the main Mn-induced phonon band at ~670 cm−1 to be resolved into two distinct components, whose relative intensity varies with the Mg/Mn ratio and correlates with the concentration of different Mn-Mgk cation complexes. Moreover, from the relative intensity of the 2LO and 1LO Raman resonances at inter-band excitation energy, the Huang-Rhys parameter has been estimated and, consequently, the strength of the electron-phonon interaction, which is found to increase linearly with the Mg/Mn ratio. Selective temperature-dependent enhancement of the high-order multiphonon peaks is due to variation in resonance conditions of exciton-mediated outgoing resonance Raman scattering by detuning the band gap. View Full-Text
Keywords: metal-organic vapor phase epitaxy; III-nitrides; cation complexes; resonance Raman spectroscopy; electron-phonon interaction metal-organic vapor phase epitaxy; III-nitrides; cation complexes; resonance Raman spectroscopy; electron-phonon interaction
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Nikolenko, A.; Strelchuk, V.; Tsykaniuk, B.; Kysylychyn, D.; Capuzzo, G.; Bonanni, A. Resonance Raman Spectroscopy of Mn-Mgk Cation Complexes in GaN. Crystals 2019, 9, 235.

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