Next Article in Journal
Passivation Effect on ZnO Films by SF6 Plasma Treatment
Previous Article in Journal
Absolute Luminescence Efficiency of Europium-Doped Calcium Fluoride (CaF2:Eu) Single Crystals under X-ray Excitation
Article Menu

Export Article

Open AccessArticle

Resonance Raman Spectroscopy of Mn-Mgk Cation Complexes in GaN

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine, 41 Nauky pr., 03028 Kyiv, Ukraine
Institut für Halbleiter-und-Festkörperphysik, Johannes Kepler University, Altenbergerstr. 69, A-4040 Linz, Austria
Author to whom correspondence should be addressed.
Crystals 2019, 9(5), 235;
Received: 15 April 2019 / Revised: 1 May 2019 / Accepted: 2 May 2019 / Published: 4 May 2019
(This article belongs to the Special Issue Raman Spectroscopy of Crystals)
PDF [3305 KB, uploaded 4 May 2019]


Resonance Raman analysis is performed in order to gain insight into the nature of impurity-induced Raman features in GaN:(Mn,Mg) hosting Mn-Mgk cation complexes and representing a prospective strategic material for the realization of full-nitride photonic devices emitting in the infra-red. It is found that in contrast to the case of GaN:Mn, the resonance enhancement of Mn-induced modes at sub-band excitation in Mg co-doped samples is not observed at an excitation of 2.4 eV, but shifts to lower energies, an effect explained by a resonance process involving photoionization of a hole from the donor level of Mn to the valence band of GaN. Selective excitation within the resonance Raman conditions allows the structure of the main Mn-induced phonon band at ~670 cm−1 to be resolved into two distinct components, whose relative intensity varies with the Mg/Mn ratio and correlates with the concentration of different Mn-Mgk cation complexes. Moreover, from the relative intensity of the 2LO and 1LO Raman resonances at inter-band excitation energy, the Huang-Rhys parameter has been estimated and, consequently, the strength of the electron-phonon interaction, which is found to increase linearly with the Mg/Mn ratio. Selective temperature-dependent enhancement of the high-order multiphonon peaks is due to variation in resonance conditions of exciton-mediated outgoing resonance Raman scattering by detuning the band gap. View Full-Text
Keywords: metal-organic vapor phase epitaxy; III-nitrides; cation complexes; resonance Raman spectroscopy; electron-phonon interaction metal-organic vapor phase epitaxy; III-nitrides; cation complexes; resonance Raman spectroscopy; electron-phonon interaction

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

Share & Cite This Article

MDPI and ACS Style

Nikolenko, A.; Strelchuk, V.; Tsykaniuk, B.; Kysylychyn, D.; Capuzzo, G.; Bonanni, A. Resonance Raman Spectroscopy of Mn-Mgk Cation Complexes in GaN. Crystals 2019, 9, 235.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics



[Return to top]
Crystals EISSN 2073-4352 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top