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Crystals 2019, 9(3), 176; https://doi.org/10.3390/cryst9030176

Deep Etched Gallium Nitride Waveguide for Raman Spectroscopic Applications

1
Department of Electronics Engineering, Chang Gung University, Guishan, Taoyuan 333, Taiwan
2
Department of Electrical and Electronic Engineering, Chung Cheng Institute of Technology, National Defense University, Daxi, Taoyuan 335, Taiwan
3
Green Technology Research Center, Chang Gung University, Guishan, Taoyuan 333, Taiwan
4
Department of Materials Engineering, Ming Chi University of Technology, Taishan, New Taipei City 243, Taiwan
5
Department of Otolaryngology-Head and Neck Surgery, Chang Gung Memorial Hospital, Linkou, Taoyuan 333, Taiwan
6
Department of Physics and NanoScience Technology Center, University of Central Florida, Orlando, FL 32816, USA
7
Department of Physics, University of Central Florida, Orlando, FL 32816, USA
8
Department of Physics and College of Optics and Photonics, University of Central Florida, Orlando, FL 32816, USA
*
Authors to whom correspondence should be addressed.
Received: 29 January 2019 / Revised: 22 March 2019 / Accepted: 23 March 2019 / Published: 26 March 2019
(This article belongs to the Special Issue GaN-Based Optoelectronic Materials and Light Emitting Devices)
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Abstract

Gallium nitride (GaN) materials with a high chemical stability and biocompatibility are well suited for bio-sensing applications and evanescent wave spectroscopy. However, GaN poses challenges for processing, especially for deep etching using conventional etching techniques. Here, we present a dry-etching technique using tetraethyl orthosilicate (TEOS) oxide as an etching barrier. We demonstrate that a sharp, vertically-etched waveguide pattern can be obtained with low surface roughness. The fabricated GaN waveguide structure is further characterized using field-emission scanning electron microscopy, Raman spectroscopy, and a stylus profilometer. View Full-Text
Keywords: Gallium nitride (GaN); waveguide; semiconductor processing; tetraethyl orthosilicate (TEOS) Gallium nitride (GaN); waveguide; semiconductor processing; tetraethyl orthosilicate (TEOS)
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Hsieh, Y.-L.; Chen, W.-S.; Chang, L.-B.; Chow, L.; Borges, S., Jr.; Schulte, A.; Huang, S.-F.; Jeng, M.-J.; Yu, C.-J. Deep Etched Gallium Nitride Waveguide for Raman Spectroscopic Applications. Crystals 2019, 9, 176.

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