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Crystals 2019, 9(2), 75; https://doi.org/10.3390/cryst9020075

Role of Hydrogen in Active Layer of Oxide-Semiconductor-Based Thin Film Transistors

Intelligent Devices & Systems Research Group, Institute of Convergence, DGIST, Daegu 42988, Korea
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Received: 26 December 2018 / Revised: 24 January 2019 / Accepted: 30 January 2019 / Published: 31 January 2019
(This article belongs to the Special Issue Thin Film Transistor)
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Abstract

Hydrogen in oxide systems plays a very important role in determining the major physical characteristics of such systems. In this study, we investigated the effect of hydrogen in oxide host systems for various oxygen environments that acted as amorphous oxide semiconductors. The oxygen environment in the sample was controlled by the oxygen gas partial pressure in the radio-frequency-sputtering process. It was confirmed that the hydrogen introduced by the passivation layer not only acted as a “killer” of oxygen deficiencies but also as the “creator” of the defects depending on the density of oxide states. Even if hydrogen is not injected, its role can change owing to unintentionally injected hydrogen, which leads to conflicting results. We discuss herein the correlation with hydrogen in the oxide semiconductor with excess or lack of oxygen through device simulation and elemental analysis. View Full-Text
Keywords: oxide semiconductor; InGaZnOx; hydrogen; oxygen deficiency; technology computer aided design (TCAD) oxide semiconductor; InGaZnOx; hydrogen; oxygen deficiency; technology computer aided design (TCAD)
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Noh, H.Y.; Kim, J.; Kim, J.-S.; Lee, M.-J.; Lee, H.-J. Role of Hydrogen in Active Layer of Oxide-Semiconductor-Based Thin Film Transistors. Crystals 2019, 9, 75.

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